T. C. Lu

According to our database, T. C. Lu authored at least 6 papers between 2007 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

A Novel Data Recovery Technique for 3D TLC NAND Flash Memory Using Intercell Program.

Y. L. Chou, W. J. Tsai, G. W. Wu, W. Chang, T. C. Lu, K. C. Chen, C. Y. Lu

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2018

Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method.

Y. H. Liu, H. Y. Lin, C. M. Jiang, Tahui Wang, W. J. Tsai, T. C. Lu, K. C. Chen, Chih-Yuan Lu

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory.

T. W. Lin, S. H. Ku, C. H. Cheng, C. W. Lee, Ijen Huang, Wen-Jer Tsai, T. C. Lu, W. P. Lu, K. C. Chen, Tahui Wang, Chih-Yuan Lu

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2009

Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems.

Wen Xu, Z. Zeng, Anthony R. Wright, Chao Zhang, J. Zhang, T. C. Lu

Microelectron. J., 2009

Terahertz band-gap in InAs/GaSb type-II superlattices.

L. L. Li, Wen Xu, Z. Zeng, Anthony R. Wright, Chao Zhang, J. Zhang, Y. L. Shi, T. C. Lu

Microelectron. J., 2009

2007

Performance and reliability improvement of flash device by a novel programming method.

Chia-Huai Ho, Kuei-Shu Chang-Liao, Ya-Nan Huang, Tien-Ko Wang, T. C. Lu

Microelectron. Reliab., 2007