Sylvain L. Delage

According to our database, Sylvain L. Delage authored at least 11 papers between 2001 and 2018.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2018

Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes.

Mourad Oualli, Christian Dua, O. Patard, P. Altuntas, S. Piotrowicz, Piero Gamarra, Cedric Lacam, J.-C. Jacquet, L. Teisseire, D. Lancereau, Eric Chartier, C. Potier, Sylvain L. Delage

Microelectron. Reliab., 2018

2014

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs.

Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, Marco Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2014

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.

Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate.

Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso

Microelectron. Reliab., 2013

2012

Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure.

Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn

Microelectron. Reliab., 2012

Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors.

Jaroslav Kovác, Alexander Satka, Ales Chvála, D. Donoval, Peter Kordos, Sylvain L. Delage

Microelectron. Reliab., 2012

2005

A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications.

A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, Sylvain L. Delage

Microelectron. Reliab., 2005

2004

Reliability Investigation of Gallium Nitride HEMT.

A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl

Microelectron. Reliab., 2004

2003

Wide band gap semiconductor reliability : Status and trends.

Sylvain L. Delage, Christian Dua

Microelectron. Reliab., 2003

2001

Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT.

Cezary Sydlo, Bastian Mottet, Husin Ganis, Hans L. Hartnagel, Viktor Krozer, Sylvain L. Delage, Simone Cassette, Eric Chartier, D. Floriot, Steven Bland

Microelectron. Reliab., 2001

Heterojunction bipolar transistors for millimeter waves applications: trends and achievements.

Sylvain L. Delage

Ann. des Télécommunications, 2001