Swagata Bhattacherjee

According to our database, Swagata Bhattacherjee authored at least 3 papers between 2011 and 2014.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2014

Temperature dependent model for threshold voltage and subthreshold slope of strained-Si channel MOSFETs with a polysilicon gate.

Abhijit Biswas, Swagata Bhattacherjee

Microelectron. Reliab., 2014

2013

Accurate modeling of the influence of back gate bias and interface roughness on the threshold voltage of nanoscale DG MOSFETs.

Abhijit Biswas, Swagata Bhattacherjee

Microelectron. Reliab., 2013

2011

Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation.

Swagata Bhattacherjee, Abhijit Biswas

Microelectron. Reliab., 2011