Sven Van Elshocht

According to our database, Sven Van Elshocht authored at least 3 papers between 2005 and 2013.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2013

Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories.

Tony Schenk, Stefan Mueller, Uwe Schroeder, Robin Materlik, Alfred Kersch, Mihaela Popovici, Christoph Adelmann, Sven Van Elshocht, Thomas Mikolajick

Proceedings of the European Solid-State Device Research Conference, 2013

2007

Mechanism of O₂-anneal induced V_fb shifts of Ru gated stacks.

Z. Li, Tom Schram, Luigi Pantisano, A. Stesmans, Thierry Conard, S. Shamuilia, V. V. Afanasiev, A. Akheyar, Sven Van Elshocht, D. P. Brunco, W. Deweerd, Y. Naoki, P. Lehnen, Stefan De Gendt, Kristin De Meyer

Microelectron. Reliab., 2007

2005

Observation and characterization of defects in HfO₂ high-K gate dielectric layers.

Vidya Kaushik, Martine Claes, Annelies Delabie, Sven Van Elshocht, Olivier Richard, Thierry Conard, Erika Rohr, Thomas Witters, Matty Caymax, Stefan De Gendt

Microelectron. Reliab., 2005