Susanna Reggiani
Orcid: 0000-0002-9616-8558
According to our database1,
Susanna Reggiani
authored at least 32 papers
between 1998 and 2023.
Collaborative distances:
Collaborative distances:
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Bibliography
2023
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE.
IEEE Access, 2023
TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
2020
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Proceedings of the 49th European Solid-State Device Research Conference, 2019
Proceedings of the 49th European Solid-State Device Research Conference, 2019
Proceedings of the 49th European Solid-State Device Research Conference, 2019
2018
Microelectron. Reliab., 2018
Microelectron. Reliab., 2018
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture.
Microelectron. Reliab., 2018
Proceedings of the 48th European Solid-State Device Research Conference, 2018
2017
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide.
Microelectron. Reliab., 2017
2016
Proceedings of the 46th European Solid-State Device Research Conference, 2016
Performance study of strained III-V materials for ultra-thin body transistor applications.
Proceedings of the 46th European Solid-State Device Research Conference, 2016
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections.
Proceedings of the 46th European Solid-State Device Research Conference, 2016
2015
Proceedings of the 45th European Solid State Device Research Conference, 2015
2014
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs.
Proceedings of the 44th European Solid State Device Research Conference, 2014
Proceedings of the 44th European Solid State Device Research Conference, 2014
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation.
Proceedings of the 44th European Solid State Device Research Conference, 2014
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime.
Proceedings of the 44th European Solid State Device Research Conference, 2014
2013
Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs.
Microelectron. J., 2013
Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited).
Proceedings of the European Solid-State Device Research Conference, 2013
Proceedings of the European Solid-State Device Research Conference, 2013
DC and small-signal numerical simulation of graphene base transistor for terahertz operation.
Proceedings of the European Solid-State Device Research Conference, 2013
Proceedings of the European Solid-State Device Research Conference, 2013
Proceedings of the European Solid-State Device Research Conference, 2013
2012
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2001
VLSI Design, 2001
2000
An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices.
VLSI Design, 2000
1998
Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE.
VLSI Design, 1998