Sungil Park

According to our database, Sungil Park authored at least 2 papers in 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitch.

Jaehyun Park, Juhun Park, Kyuman Hwang, Jinchan Yun, Dahye Kim, Sungil Park, Jejune Park, Jinwook Yang, Jae Won Jeong, Chuljin Yun, Jinho Bae, Sam Park, Daihong Huh, Sanghyeon Kim, Seungeun Baek, Suk Yang, Inhae Zoh, Junghan Lee, Tae-sun Kim, Younsu Ha, Sun-Jung Lee, Sang Wuk Park, Bong Jin Kuh, Daewon Ha, Sangjin Hyun, Sujin Ahn, Jaihyuk Song

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Ge(110) GAA Nanosheet / Si(100) Tri-gate Nanosheet Monolithic CFETs Featuring Record-High Hole Mobility.

Seong Kwang Kim, Hyeongrak Lim, Jaeyong Jeong, Young-Keun Park, Jejune Park, Sungil Park, Jaehyun Park, Daewon Ha, Byung Jin Cho, Sanghyeon Kim

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024