Sunghoi Hur
According to our database1,
Sunghoi Hur
authored at least 9 papers
between 2023 and 2024.
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Bibliography
2024
Innovative Barrier Metal-Less Metal Gate Scheme Leading to Highly Reliable Cell Characteristics for 8th Generation 512Gb 3D NAND Flash Memory.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
Mechanical Stress Effects on Dielectric Leakage and Interconnection Integrity in 3D NAND Flash Memory.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
Kernel Smoothing Technique Based on Multiple-Coordinate System for Screening Potential Failures in NAND Flash Memory.
Proceedings of the 41st IEEE VLSI Test Symposium, 2023
Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
High Bit Cost Scalability and Reliable Cell Characteristics for 7th Generation 1Tb 4Bit/Cell 3D-NAND Flash.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
A 3.0 Gb/s/pin 4<sup>th</sup> generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Proceedings of the IEEE International Memory Workshop, 2023
Process Improvements for 7<sup>th</sup> Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production.
Proceedings of the IEEE International Memory Workshop, 2023