Sunghoi Hur

According to our database1, Sunghoi Hur authored at least 9 papers between 2023 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2024
Innovative Barrier Metal-Less Metal Gate Scheme Leading to Highly Reliable Cell Characteristics for 8th Generation 512Gb 3D NAND Flash Memory.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Mechanical Stress Effects on Dielectric Leakage and Interconnection Integrity in 3D NAND Flash Memory.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024


2023
Kernel Smoothing Technique Based on Multiple-Coordinate System for Screening Potential Failures in NAND Flash Memory.
Proceedings of the 41st IEEE VLSI Test Symposium, 2023

Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

High Bit Cost Scalability and Reliable Cell Characteristics for 7th Generation 1Tb 4Bit/Cell 3D-NAND Flash.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

A 3.0 Gb/s/pin 4<sup>th</sup> generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Improvement of GIDL-assisted Erase by using Surrounded BL PAD Structure for VNAND.
Proceedings of the IEEE International Memory Workshop, 2023

Process Improvements for 7<sup>th</sup> Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production.
Proceedings of the IEEE International Memory Workshop, 2023


  Loading...