Sung-Min Joe

According to our database, Sung-Min Joe authored at least 5 papers between 2016 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

Cell Operation Technologies to Overcome Scale-down Issues in 3D NAND Flash Memory.

Wandong Kim, Dae-Seok Byeon, Sung-Min Joe, Jinyub Lee, Jai Hyuk Song

Proceedings of the International Conference on Electronics, Information, and Communication, 2022

2020

Machine-Learning-Based Read Reference Voltage Estimation for NAND Flash Memory Systems Without Knowledge of Retention Time.

Hyemin Choe, Jeongju Jee, Seung-Chan Lim, Sung-Min Joe, Il-Han Park, Hyuncheol Park

IEEE Access, 2020

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate.

Doo-Hyun Kim, Hyunggon Kim, Sung-Won Yun, Youngsun Song, Jisu Kim, Sung-Min Joe, Kyung-Hwa Kang, Joonsuc Jang, Hyun-Jun Yoon, Kangbin Lee, Minseok Kim, Joonsoo Kwon, Jonghoo Jo, Sehwan Park, Jiyoon Park, Jisoo Cho, Sohyun Park, Garam Kim, Jinbae Bang, Heejin Kim, Jongeun Park, Deokwoo Lee, Seonyong Lee, Hwajun Jang, Hanjun Lee, Donghyun Shin, Jungmin Park, Jungkwan Kim, Jongmin Kim, Kichang Jang, II Han Park, Seung Hyun Moon, Myung-Hoon Choi, Pansuk Kwak, Joo-Yong Park, Youngdon Choi, Sanglok Kim, Seungjae Lee, Dongku Kang, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Jung-Hwan Choi, Sangjoon Hwang, Jaeheon Jeong

Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020

2018

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput.

Seungjae Lee, Chulbum Kim, Minsu Kim, Sung-Min Joe, Joonsuc Jang, Seungbum Kim, Kangbin Lee, Jisu Kim, Jiyoon Park, Hanjun Lee, Min-Seok Kim, Seonyong Lee, SeonGeon Lee, Jinbae Bang, Dongjin Shin, Hwajun Jang, Deokwoo Lee, Nahyun Kim, Jonghoo Jo, Jonghoon Park, Sohyun Park, Youngsik Rho, Yongha Park, Hojoon Kim, Cheon An Lee, Chungho Yu, Young-Sun Min, Moosung Kim, Kyungmin Kim, Seunghyun Moon, Hyun-Jin Kim, Youngdon Choi, YoungHwan Ryu, Jinwon Choi, Minyeong Lee, Jungkwan Kim, Gyo Soo Choo, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Ki-Tae Park, Kyehyun Kyung

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2016

7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate.

Seungjae Lee, Jin-Yub Lee, Il-Han Park, Jong-Yeol Park, Sung-Won Yun, Minsu Kim, Jong-Hoon Lee, Min-Seok Kim, Kangbin Lee, Taeeun Kim, Byungkyu Cho, Dooho Cho, Sangbum Yun, Jung-No Im, Hyejin Yim, Kyung-Hwa Kang, Suchang Jeon, Sungkyu Jo, Yang-Lo Ahn, Sung-Min Joe, Suyong Kim, Deok-kyun Woo, Jiyoon Park, Hyun Wook Park, Youngmin Kim, Jonghoon Park, Yongsu Choi, Makoto Hirano, Jeong-Don Ihm, Byunghoon Jeong, Seon-Kyoo Lee, Moosung Kim, Hokil Lee, Sungwhan Seo, Hongsoo Jeon, Chan-ho Kim, Hyunggon Kim, Jintae Kim, Yongsik Yim, Hoosung Kim, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016