Suhwan Lim

According to our database, Suhwan Lim authored at least 15 papers between 2017 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate.

Zijian Zhao, Sola Woo, Khandker Akif Aabrar, Sharadindu Gopal Kirtania, Zhouhang Jiang, Shan Deng, Yi Xiao, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Steven Soss, Sven Beyer, Rajiv V. Joshi, Scott Meninger, Mohamed Mohamed, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Suman Datta, Shimeng Yu, Kai Ni

CoRR, 2024

In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling.

Giuk Kim, Hyojun Choi, Hunbeom Shin, Sangho Lee, Sangmok Lee, Yunseok Nam, Minhyun Jung, Ilho Myeong, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology.

Venkateswarlu Gaddam, Junghyeon Hwang, Hunbeom Shin, Chaeheon Kim, Giuk Kim, Hyung-Jun Kim, Jooho Lee, Hyun-Cheol Kim, Bumsu Park, Suhwan Lim, Sang Yun Kim, Kwangsoo Kim, Sungho Lee, Daewon Ha, Jinho Ahn, Sanghun Jeon

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND.

Ilho Myeong, Suhwan Lim, Taeyoung Kim, Sanghyun Park, Suseong Noh, Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Munkang Choi, Kiheun Lee, Sangwoo Han, Jongyeon Baek, Kijoon Kim, Dongjin Jung, Jisung Kim, Jaewoo Park, Seunghyun Kim, Hyoseok Kim, Ilyounz Yoon, Jaeho Kim, Kwangsoo Kim, Kwangmin Park, Bong Jin Kuh, Wanki Kim, Daewon Ha, Sujin Ahn, Jaihyuk Song, Sijung Yoo, Hyun Jae Lee, Duk-Hyun Choe, Seung-Geol Nam, Jinseong Heo

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET.

Taeyoung Kim, Suhwan Lim, Ilho Myeong, Sanghyun Park, Suseong Noh, Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Moonkang Choi, Kiheun Lee, Sangwoo Han, Jongyeon Baek, Kijoon Kim, Dongjin Jung, Jisung Kim, Jaewoo Park, Seunghyun Kim, Hyoseok Kim, Sijung Yoo, Hyun Jae Lee, Duk-Hyun Choe, Seung-Geol Nam, Ilyoung Yoon, Chaeho Kim, Kwanzsoo Kim, Kwanzmin Park, Bong Jin Kuh, Jinseong Heo, Wanki Kim, Daewon Ha, Jaihyuk Song

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation.

Dipjyoti Das, Lance Fernandes, Prasanna Venkatesan Ravindran, Taeyoung Song, Chinsung Park, Nashrah Afroze, Mengkun Tian, Hang Chen, Winston Chem, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Islam Khan

Proceedings of the IEEE International Memory Workshop, 2024

2023

Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory.

Changhwan Lee, Min-Tai Yu, Sejun Park, Hoki Lee, Bio Kim, Suhwan Lim, Jaeduk Lee, Sung-Hun Lee, Mincheol Park, Sujin Ahn, Sunghoi Hur

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Improvement of GIDL-assisted Erase by using Surrounded BL PAD Structure for VNAND.

Suhwan Lim, Samki Kim, Changhee Lee, Hyeongwon Choi, Nambin Kim, Jaehun Jung, Hanvit Yang, Tae-Hun Kim, Junhee Lim, Daewon Ha, Sunghoi Hur, Jae-hoon Jang, Yu-Gyun Shin, Jaihyuk Song

Proceedings of the IEEE International Memory Workshop, 2023

2021

Coexistence study on 5G V2X in mmWave.

Jin Woong Park, Jin-Yup Hwang, Suhwan Lim, Yoonoh Yang, Sang-Wook Lee

Proceedings of the International Conference on Information and Communication Technology Convergence, 2021

2020

Efficient precise weight tuning protocol considering variation of the synaptic devices and target accuracy.

Hyeongsu Kim, Jong-Ho Bae, Suhwan Lim, Sungtae Lee, Young-Tak Seo, Dongseok Kwon, Byung-Gook Park, Jong-Ho Lee

Neurocomputing, 2020

2019

Adaptive learning rule for hardware-based deep neural networks using electronic synapse devices.

Suhwan Lim, Jong-Ho Bae, Jai-Ho Eum, Sungtae Lee, Chul-Heung Kim, Dongseok Kwon, Byung-Gook Park, Jong-Ho Lee

Neural Comput. Appl., 2019

Investigation of Neural Networks Using Synapse Arrays Based on Gated Schottky Diodes.

Suhwan Lim, Dongseok Kwon, Sungtae Lee, Hyeongsu Kim, Jong-Ho Bae, Jong-Ho Lee

Proceedings of the International Joint Conference on Neural Networks, 2019

Review of candidate devices for neuromorphic applications.

Jong-Ho Lee, Yoohyun Noh, Hyeongsu Kim, Jangsaeng Kim, Jong-Ho Bae, Sung Yun Woo, Sungtae Lee, Suhwan Lim, Won-Mook Kang, Young-Tak Seo, Soochang Lee, Dongseok Kwon, Seongbin Oh

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

Hardware-based Neural Networks using a Gated Schottky Diode as a Synapse Device.

Suhwan Lim, Jong-Ho Bae, Jai-Ho Eum, Sungtae Lee, Chul-Heung Kim, Dongseok Kwon, Jong-Ho Lee

Proceedings of the IEEE International Symposium on Circuits and Systems, 2018

2017

Adaptive Learning Rule for Hardware-based Deep Neural Networks Using Electronic Synapse Devices.

Suhwan Lim, Jong-Ho Bae, Jai-Ho Eum, Sungtae Lee, Chul-Heung Kim, Byung-Gook Park, Jong-Ho Lee

CoRR, 2017