Steven H. Voldman

According to our database, Steven H. Voldman authored at least 12 papers between 1995 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Computational Simulation of a Field-Induced Charged Board Event Test Bench Using Transient Analysis.

S. Chumpen, S. Pimpakun, S. Plong-Ngooluam, Steven H. Voldman, Chiranut Sa-ngiamsak

IEEE Access, 2023

2015

Electrical Overstress (EOS): Challenges for component and system-level co-design.

Steven H. Voldman

Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015

2005

A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II - Latchup.

Steven H. Voldman

Microelectron. Reliab., 2005

A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I - ESD.

Steven H. Voldman

Microelectron. Reliab., 2005

ESD-Induced Internal Core Device Failure: New Failure Modes in System-on-Chip (SoC) Designs, invited.

Yoon Huh, Peter Bendix, Kyungjin Min, Jau-Wen Chen, Ravindra Narayan, Larry D. Johnson, Steven H. Voldman

Proceedings of the 5th IEEE International Workshop on System-on-Chip for Real-Time Applications (IWSOC 2005), 2005

2004

A review of electrostatic discharge (ESD) in advanced semiconductor technology.

Steven H. Voldman

Microelectron. Reliab., 2004

2003

Microanalysis and electromigration reliability performance of high current transmission line pulse (TLP) stressed copper interconnects.

Sherry Suat Cheng Khoo, Pee Ya Tan, Steven H. Voldman

Microelectron. Reliab., 2003

Foundation of rf CMOS and SiGe BiCMOS technologies.

James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg G. Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Youssef Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St. Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping-Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame, Dean A. Herman Jr., Bernard S. Meyerson

IBM J. Res. Dev., 2003

2001

A strategy for characterization and evaluation of ESD robustness of CMOS semiconductor technologies.

Steven H. Voldman, W. Anderson, R. Ashton, M. Chaine, Charvaka Duvvury, T. Maloney, E. Worley

Microelectron. Reliab., 2001

1999

The state of the art of electrostatic discharge protection: physics, technology, circuits, design, simulation, and scaling.

Steven H. Voldman

IEEE J. Solid State Circuits, 1999

1995

Overview of gate linewidth control in the manufacture of CMOS logic chips.

Donald G. Chesebro, James W. Adkisson, Lyman R. Clark, Steven N. Eslinger, Margaret A. Faucher, Steven J. Holmes, Raymond P. Mallette, Edward J. Nowak, Edward W. Sengle, Steven H. Voldman, Thomas W. Weeks

IBM J. Res. Dev., 1995

The evolution of IBM CMOS DRAM technology.

Eric Adler, John K. DeBrosse, Stephen F. Geissler, Steven J. Holmes, Mark D. Jaffe, Jeffrey B. Johnson, Charles W. Koburger III, Jerome B. Lasky, Brian Lloyd, Glen L. Miles, James S. Nakos, Wendell P. Noble Jr., Steven H. Voldman, Michael Armacost, Richard Ferguson

IBM J. Res. Dev., 1995