Steve S. Chung
According to our database1,
Steve S. Chung
authored at least 11 papers
between 1999 and 2024.
Collaborative distances:
Collaborative distances:
Awards
IEEE Fellow
IEEE Fellow 2006, "For contributions to reliability in ultra-thin-oxide complementary metal oxide semiconductor (CMOS) devices.".
Timeline
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Book In proceedings Article PhD thesis Dataset OtherLinks
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Bibliography
2024
An Ultra-Low Voltage Auger-Recombination Enhanced Hot Hole Injection Scheme in Implementing a 3 Bits per Cell e-DRAM CIM Macro for Inference Accelerator.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
2023
First Demonstration of a Design Methodology for Highly Reliable Operation at High Temperature on 128kb 1T1C FeRAM Chip.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
A World First QLC RRAM: Highly Reliable Resistive-Gate Flash with Record 10<sup>8</sup> Endurance and Excellent Retention.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great Memory Wall with 10 ns of PGM-pulse, 10<sup>10</sup> Cycles of Endurance, and Decade Lifetime at 103 °C.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
2021
A Reliable Triple-Level Operation of Resistive-Gate Flash Featuring Forming-Free and High Immunity to Sneak Path.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
A Pulsed RTN Transient Measurement Technique: Demonstration on the Understanding of the Switching in Resistance Memory.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
The Demonstration of Gate Dielectric-fuse 4kb OTP Memory Feasible for Embedded Applications in High-k Metal-gate CMOS Generations and Beyond.
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019
Proceedings of the 13th IEEE International Conference on ASIC, 2019
2018
Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F<sup>2</sup> and K-means Clustering for Power Reduction.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018
2017
Model. Assist. Stat. Appl., 2017
1999
Proceedings of the 1999 Conference on Asia South Pacific Design Automation, 1999