Steve S. Chung

According to our database1, Steve S. Chung authored at least 11 papers between 1999 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2006, "For contributions to reliability in ultra-thin-oxide complementary metal oxide semiconductor (CMOS) devices.".

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
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Links

On csauthors.net:

Bibliography

2024
An Ultra-Low Voltage Auger-Recombination Enhanced Hot Hole Injection Scheme in Implementing a 3 Bits per Cell e-DRAM CIM Macro for Inference Accelerator.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023
First Demonstration of a Design Methodology for Highly Reliable Operation at High Temperature on 128kb 1T1C FeRAM Chip.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

A World First QLC RRAM: Highly Reliable Resistive-Gate Flash with Record 10<sup>8</sup> Endurance and Excellent Retention.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great Memory Wall with 10 ns of PGM-pulse, 10<sup>10</sup> Cycles of Endurance, and Decade Lifetime at 103 °C.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021
A Reliable Triple-Level Operation of Resistive-Gate Flash Featuring Forming-Free and High Immunity to Sneak Path.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
A Pulsed RTN Transient Measurement Technique: Demonstration on the Understanding of the Switching in Resistance Memory.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
The Demonstration of Gate Dielectric-fuse 4kb OTP Memory Feasible for Embedded Applications in High-k Metal-gate CMOS Generations and Beyond.
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019

The Advances of OTP Memory for Embedded Applications in HKMG Generation and Beyond.
Proceedings of the 13th IEEE International Conference on ASIC, 2019

2018
Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F<sup>2</sup> and K-means Clustering for Power Reduction.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018

2017
Financial volatility estimation using functional gradient descent algorithm.
Model. Assist. Stat. Appl., 2017

1999
Universal Switched-Current Integrator Blocks for SI Filter Design.
Proceedings of the 1999 Conference on Asia South Pacific Design Automation, 1999


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