Stephen J. Pearton

Orcid: 0000-0001-6498-1256

Affiliations:
  • University of Florida, Gainesville, FL, USA


According to our database1, Stephen J. Pearton authored at least 12 papers between 2009 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Online presence:

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Bibliography

2024
Demonstration of Record Breakdown up to 13.5 kV in NiO/β-Ga2O3 Vertical Rectifiers.
Proceedings of the Device Research Conference, 2024

2020
A Two-Electrode, Double-Pulsed Sensor Readout Circuit for Cardiac Troponin I Measurement.
IEEE Trans. Biomed. Circuits Syst., 2020

2019
A Reconfigurable, Pulse-shaping Potentiometric Readout System for Bio-Sensing Transistors.
Proceedings of the 41st Annual International Conference of the IEEE Engineering in Medicine and Biology Society, 2019

2018
2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes.
Proceedings of the 76th Device Research Conference, 2018

2017
Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts.
Microelectron. Reliab., 2017

Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors.
Microelectron. Reliab., 2017

2012
Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors.
Microelectron. Reliab., 2012

Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors.
Microelectron. Reliab., 2012

Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping.
Microelectron. Reliab., 2012

Gallium nitride-based gas, chemical and biomedical sensors.
IEEE Instrum. Meas. Mag., 2012

2011
AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress.
Microelectron. Reliab., 2011

2009
Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices.
Sensors, 2009


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