Stefaan Decoutere
According to our database1,
Stefaan Decoutere
authored at least 49 papers
between 2001 and 2024.
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Bibliography
2024
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
2023
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology.
Proceedings of the 17th Conference on Ph.D Research in Microelectronics and Electronics, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022
2021
An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply.
IEICE Electron. Express, 2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process.
IEICE Electron. Express, 2019
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors.
Proceedings of the 49th European Solid-State Device Research Conference, 2019
2018
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs.
Microelectron. Reliab., 2018
2017
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.
Microelectron. Reliab., 2017
Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation.
Microelectron. Reliab., 2017
2016
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.
Microelectron. Reliab., 2016
Microelectron. Reliab., 2016
2015
Microelectron. Reliab., 2015
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
2014
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress.
Microelectron. Reliab., 2014
Microelectron. Reliab., 2014
Proceedings of the 44th European Solid State Device Research Conference, 2014
2012
Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop.
Microelectron. Reliab., 2012
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2011
Microelectron. Reliab., 2011
2010
Proceedings of the VLSI Design 2010: 23rd International Conference on VLSI Design, 2010
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2010), May 30, 2010
2009
Microelectron. Reliab., 2009
Proceedings of the 35th European Solid-State Circuits Conference, 2009
Proceedings of the IEEE Custom Integrated Circuits Conference, 2009
2008
Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies.
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008
2007
IEEE Trans. Circuits Syst. I Regul. Pap., 2007
Proceedings of the 14th IEEE International Conference on Electronics, 2007
Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, 2007
2006
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions.
Microelectron. Reliab., 2006
Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006
Technologies for (sub-) 45nm Analog/RF CMOS - Circuit Design Opportunities and Challenges.
Proceedings of the IEEE 2006 Custom Integrated Circuits Conference, 2006
2005
IEEE J. Solid State Circuits, 2005
Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors.
IEEE J. Solid State Circuits, 2005
IEICE Trans. Electron., 2005
Proceedings of the 31st European Solid-State Circuits Conference, 2005
Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005
Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005
2004
A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor.
Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, 2004
2002
Physics-based closed-form inductance expression for compact modeling of integrated spiral inductors.
IEEE J. Solid State Circuits, 2002
IEEE J. Solid State Circuits, 2002
2001
Microelectron. Reliab., 2001