Stacia Keller

According to our database1, Stacia Keller authored at least 8 papers between 2000 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2024
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz.
Proceedings of the Device Research Conference, 2023

2021
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT.
Proceedings of the 2020 Device Research Conference, 2020

Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage.
Proceedings of the 2020 Device Research Conference, 2020

2019
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Virtual-Source Modeling of N-polar GaN MISHEMTS.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2000
Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers.
IEEE J. Solid State Circuits, 2000


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