Stacey Bent

According to our database, Stacey Bent authored at least 1 paper in 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Achieving 1-nm-Scale Equivalent Oxide Thickness Top Gate Dielectric on Monolayer Transition Metal Dichalcogenide Transistors with CMOS-Friendly Approaches.

Jung-Soo Ko, Alex Shearer, Sol Lee, Kathryn M. Neilson, Marc Jaikissoon, Kwanpyo Kim, Stacey Bent, Krishna Saraswat, Eric Pop

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024