Srboljub Stankovic

According to our database, Srboljub Stankovic authored at least 5 papers between 2002 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress.

Sandra Veljkovic, Nikola Mitrovic, Vojkan Davidovic, Snezana Golubovic, Snezana Djoric-Veljkovic, Albena Paskaleva, Dencho Spassov, Srboljub Stankovic, Marko S. Andjelkovic, Zoran Prijic, Ivica Manic, Aneta Prijic, Goran S. Ristic, Danijel Dankovic

J. Circuits Syst. Comput., December, 2022

2020

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor.

Stefan D. Ilic, Aleksandar Jevtic, Srboljub Stankovic, Goran S. Ristic

Sensors, 2020

2018

NBTI and irradiation related degradation mechanisms in power VDMOS transistors.

Ninoslav Stojadinovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Srboljub Stankovic, Aneta Prijic, Zoran Prijic, Ivica Manic, Danijel Dankovic

Microelectron. Reliab., 2018

2006

The new method of determining characteristics of elements for overvoltage protection of low-voltage system.

Predrag Osmokrovic, Boris Loncar, Srboljub Stankovic

IEEE Trans. Instrum. Meas., 2006

2002

Aging of the over-voltage protection elements caused by over-voltages.

Predrag Osmokrovic, Boris Loncar, Srboljub Stankovic, Aleksandra Vasic

Microelectron. Reliab., 2002