Srabanti Chowdhury

According to our database, Srabanti Chowdhury authored at least 13 papers between 2019 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Robust Pareto Design of GaN HEMTs for Millimeter-Wave Applications.

Rafael Perez Martinez, Stephen P. Boyd, Srabanti Chowdhury

CoRR, 2024

Compact Model Parameter Extraction via Derivative-Free Optimization.

Rafael Perez Martinez, Masaya Iwamoto, Kelly Woo, Zhengliang Bian, Roberto Tinti, Stephen P. Boyd, Srabanti Chowdhury

IEEE Access, 2024

2023

Thermal Scaffolding for Ultra-Dense 3D Integrated Circuits.

Dennis Rich, Anna Kasperovich, Mohamadali Malakoutian, Robert M. Radway, Shiho Hagiwara, Takahide Yoshikawa, Srabanti Chowdhury, Subhasish Mitra

Proceedings of the 60th ACM/IEEE Design Automation Conference, 2023

On Extracting the Maximum Power Density at High Frequencies from Gallium Nitride and Related Materials.

Mohamadali Malakoutian, Srabanti Chowdhury

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022

Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization.

Bhawani Shankar, Zhengliang Bian, Ke Zeng, Chuanzhe Meng, Rafael Perez Martinez, Srabanti Chowdhury, Brendan Gunning, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress.

Bhawani Shankar, Ke Zeng, Brendan Gunning, Rafael Perez Martinez, Chuanzhe Meng, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar, Srabanti Chowdhury

Proceedings of the Device Research Conference, 2022

2021

Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination.

Ke Zeng, Srabanti Chowdhury, Brendan Gunning, Robert Kaplar, Travis Anderson

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Integration of Polycrystalline diamond on top of GaN and Ga2O3 devices for thermal management.

Srabanti Chowdhury

Proceedings of the Device Research Conference, 2021

2020

Robust avalanche in GaN leading to record performance in avalanche photodiode.

Dong Ji, Burcu Ercan, Garret Benson, A. K. M. Newaz, Srabanti Chowdhury

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature.

Chenhao Ren, Mohamadali Malakoutian, Siwei Li, Srabanti Chowdhury

Proceedings of the 2020 Device Research Conference, 2020

Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode.

Dong Ji, Burcu Ercan, Jia Zhuang, Lei Gu, Juan Rivas-Davila, Srabanti Chowdhury

Proceedings of the 2020 Device Research Conference, 2020

2019

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).

Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Current Scaling in Single and Multiple Fin Static Induction Transistors with Sub-Micron Fin Width.

Jaeyi Chun, Srabanti Chowdhury

Proceedings of the Device Research Conference, 2019