Souvik Mahapatra

According to our database, Souvik Mahapatra authored at least 27 papers between 2014 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

A TCAD to SPICE Framework for Isolation of BTI and HCD in GAA-SNS FETs and to Estimate Impact on RO Under Normal and Overclocking Conditions.

Karansingh Thakor, Payel Chatterjee, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Modeling of Post-Cycling Retention Bake in 3-D CTF TLC NAND Arrays.

Rashmi Saikia, Himanshu Rai, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions.

Priyankka Gundlapudi Ravikumar, Prasanna Venkatesan Ravindran, Khandker Akif Aabrar, Taeyoung Song, Sharadindu Gopal Kirtania, Dipjyoti Das, Chinsung Park, Nashrah Afroze, Mengkun Tian, Shimeng Yu, Ahmad Ehtesham Islam, Suman Datta, Souvik Mahapatra, Asif Islam Khan

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet Technology.

Leitao Liu, Jingtian Fang, Ashish Pal, Plamen Asenov, Mohit Bajaj, Bei Deng, Xi-Wei Lin, Souvik Mahapatra, Subi Kengeri, El Mehdi Bazizi

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Comprehensive physics-based modeling of post-cycling long-term data retention in 176L 3-D NAND Flash Memories.

Karansingh Thakor, Nikhil Rangarajan, Himanshu Diwakar, Rashmi Saikia, Tarun Samadder, Souvik Mahapatra, Shyam Raghunathan, Yingda Dong

Proceedings of the IEEE International Memory Workshop, 2024

2023

A Physics-based Model for Long Term Data Retention Characteristics in 3D NAND Flash Memory.

Rashmi Saikia, Aseer Ansari, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs.

Nirmaan Shanker, Li-Chen Wang, Suraj S. Cheema, Wenshen Li, Nilotpal Choudhury, Chenming Hu, Souvik Mahapatra, Sayeef S. Salahuddin

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Modeling Time and Bias Dependence of Classical HCD Mechanism (Peak ISUB Stress) in n-MOSFETs.

Himanshu Diwakar, Karansingh Thakor, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed VG/VD Stress.

Nilotpal Choudhury, Ayush Ranjan, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

A Theoretical Framework for Trap Generation and Passivation in NAND Flash Tunnel Oxide During Distributed Cycling and Retention Bake.

Tarun Samadder, Satyam Kumar, Karansingh Thakor, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Stochastic and Deterministic Modeling Frameworks for Time Kinetics of Gate Insulator Traps During and After Hot Carrier Stress in MOSFETs.

Satyam Kumar, Tarun Samadder, Karansingh Thakor, Uma Sharma, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Modeling of HKMG Stack Process Impact on Gate Leakage, SILC and PBTI.

Dimple Kochar, Tarun Samadder, Subhadeep Mukhopadhyay, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs.

Nilotpal Choudhury, Tarun Samadder, Ravi Tiwari, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

BTI and HCD Degradation in a Complete 32 × 64 bit SRAM Array - including Sense Amplifiers and Write Drivers - under Processor Activity.

Victor M. van Santen, Simon Thomann, Chaitanya Pasupuleti, Paul R. Genssler, Narendra Gangwar, Uma Sharma, Jörg Henkel, Souvik Mahapatra, Hussam Amrouch

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs.

Nilotpal Choudhury, Uma Sharma, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Analysis of The Hole Trapping Detrapping Component of NBTI Over Extended Temperature Range.

Nilotpal Choudhury, Narendra Parihar, Souvik Mahapatra

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Hot Carrier Degradation in Cryo-CMOS.

Wriddhi Chakraborty, Uma Sharma, Suman Datta, Souvik Mahapatra

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Modeling the Interdependences Between Voltage Fluctuation and BTI Aging.

Sami Salamin, Victor M. van Santen, Hussam Amrouch, Narendra Parihar, Souvik Mahapatra, Jörg Henkel

IEEE Trans. Very Large Scale Integr. Syst., 2019

On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs.

Narendra Parihar, Uma Sharma, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Controversial issues in negative bias temperature instability.

James H. Stathis, Souvik Mahapatra, Tibor Grasser

Microelectron. Reliab., 2018

TCAD modeling for reliability.

Paul Pfäffli, Hiu Yung Wong, X. Xu, Luca Silvestri, X. W. Lin, T. Yang, Ravi Tiwari, Souvik Mahapatra, Steve Motzny, Victor Moroz, Terry Ma

Microelectron. Reliab., 2018

A review of NBTI mechanisms and models.

Souvik Mahapatra, Narendra Parihar

Microelectron. Reliab., 2018

Prediction of NBTI stress and recovery time kinetics in Si capped SiGe p-MOSFETs.

Narendra Parihar, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2016

Aging-aware voltage scaling.

Victor M. van Santen, Hussam Amrouch, Narendra Parihar, Souvik Mahapatra, Jörg Henkel

Proceedings of the 2016 Design, Automation & Test in Europe Conference & Exhibition, 2016

2015

Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress.

Nilesh Goel, Tejas Naphade, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI.

Ankush Chaudhary, Ben Kaczer, Philippe J. Roussel, Thomas Chiarella, Naoto Horiguchi, Souvik Mahapatra

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs.

Nilesh Goel, Kaustubh Joshi, S. Mukhopadhyay, N. Nanaware, Souvik Mahapatra

Microelectron. Reliab., 2014