Soumitra Pal

Orcid: 0000-0002-6186-6209

Affiliations:
  • Hong Kong University of Science and Technology, Department of Electronic and Computer Engineering, Hong Kong
  • Birla Institute of Technology, Ranchi, Jharkhand, India (former)


According to our database1, Soumitra Pal authored at least 13 papers between 2016 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

Legend:

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Bibliography

2023
Energy-Efficient Dual-Node-Upset-Recoverable 12T SRAM for Low-Power Aerospace Applications.
IEEE Access, 2023

2022
Soft-Error-Aware Read-Stability-Enhanced Low-Power 12T SRAM With Multi-Node Upset Recoverability for Aerospace Applications.
IEEE Trans. Circuits Syst. I Regul. Pap., 2022

2021
Highly Stable Low Power Radiation Hardened Memory-by-Design SRAM for Space Applications.
IEEE Trans. Circuits Syst. II Express Briefs, 2021

Soft-Error-Aware Read-Decoupled SRAM With Multi-Node Recovery for Aerospace Applications.
IEEE Trans. Circuits Syst. II Express Briefs, 2021

Soft-Error-Immune Read-Stability-Improved SRAM for Multi-Node Upset Tolerance in Space Applications.
IEEE Trans. Circuits Syst. I Regul. Pap., 2021

Design of Soft-Error-Aware SRAM With Multi-Node Upset Recovery for Aerospace Applications.
IEEE Trans. Circuits Syst. I Regul. Pap., 2021

Radiation-hardened read-decoupled low-power 12T SRAM for space applications.
Int. J. Circuit Theory Appl., 2021

2020
40.68 MHz Digital On-Off Delay-Compensated Active Rectifier for WPT of Biomedical Applications.
IEEE Trans. Circuits Syst., 2020

Reliable write assist low power SRAM cell for wireless sensor network applications.
IET Circuits Devices Syst., 2020

2019
Design of CNFET based power- and variability-aware nonvolatile RRAM cell.
Microelectron. J., 2019

Transmission gate-based 9T SRAM cell for variation resilient low power and reliable internet of things applications.
IET Circuits Devices Syst., 2019

Design and development of memristor-based RRAM.
IET Circuits Devices Syst., 2019

2016
Variation Tolerant Differential 8T SRAM Cell for Ultralow Power Applications.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2016


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