Sooyeol Chai

According to our database, Sooyeol Chai authored at least 2 papers between 2020 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density.

Wanik Cho, Jongseok Jung, Jongwoo Kim, Junghoon Nam, Sangkyu Lee, Yujong Noh, Dauni Kim, Wanseob Lee, Kayoung Cho, Kwanho Kim, Heejoo Lee, Sooyeol Chai, Eunwoo Jo, Hanna Cho, Jong-Seok Kim, Chankeun Kwon, Cheolioona Park, Hveonsu Nam, Haeun Won, Taeho Kim, Kyeonghwan Park, Sanghoon Oh, Jinhyun Ban, Junyoung Park, Jae-Hyeon Shin, Taisik Shin, Junseo Jang, Jiseong Mun, Jehyun Choi, Hyunseung Choi, Sung-Wook Choi, Wonsun Park, Dongkvu Yoon, Minsu Kim, Junyoun Lim, Chiwook An, Hyunyoung Shirr, Haesoon Oh, Haechan Park, Sungbo Shim, Hwang Huh, Honasok Choi, Seungpil Lee, Jaesuna Sim, Kichan Gwon, Jumsoo Kim, Woopyo Jeong, Jungdal Choi, Kyowon Jin

Proceedings of the IEEE International Solid-State Circuits Conference, 2022

2020

13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique.

Hwang Huh, Wanik Cho, Jinhaeng Lee, Yujong Noh, Yongsoon Park, Sunghwa Ok, Jongwoo Kim, Kayoung Cho, Hyunchul Lee, Geonu Kim, Kangwoo Park, Kwanho Kim, Heejoo Lee, Sooyeol Chai, Chankeun Kwon, Hanna Cho, Chanhui Jeong, Yujin Yang, Jayoon Goo, Jangwon Park, Juhyeong Lee, Heonki Kirr, Kangwook Jo, Cheoljoong Park, Hyeonsu Nam, Hyunseok Song, Sangkyu Lee, Woopyo Jeong, Kun-Ok Ahn, Tae-Sung Jung

Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020