Sokrates T. Pantelides

According to our database, Sokrates T. Pantelides authored at least 4 papers between 2007 and 2011.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2011

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH₃-rich conditions.

Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides

Microelectron. Reliab., 2011

2009

Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling.

Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, Sergey N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf

Proceedings of the 35th European Solid-State Circuits Conference, 2009

2007

Hydrogen in MOSFETs - A primary agent of reliability issues.

Sokrates T. Pantelides, L. Tsetseris, Sergey N. Rashkeev, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf

Microelectron. Reliab., 2007

Effects of device aging on microelectronics radiation response and reliability.

Daniel M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, Ronald D. Schrimpf, Sokrates T. Pantelides

Microelectron. Reliab., 2007