Sohya Kudoh

According to our database, Sohya Kudoh authored at least 6 papers between 2015 and 2020.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of six.

2020

<i>In-Situ</i> N₂-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering.

Shun'ichiro Ohmi, Shin Ishimatsu, Yuske Horiuchi, Sohya Kudoh

IEICE Trans. Electron., 2020

2019

Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface Polarization.

Shun'ichiro Ohmi, Yizhe Ding, Sohya Kudoh

Proceedings of the Device Research Conference, 2019

2018

Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H₂ Ambient.

Sohya Kudoh, Shun'ichiro Ohmi

IEICE Trans. Electron., 2018

Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory.

Sohya Kudoh, Shun'ichiro Ohmi

Proceedings of the 76th Device Research Conference, 2018

2016

A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics.

Sohya Kudoh, Shun'ichiro Ohmi

IEICE Trans. Electron., 2016

2015

A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics.

Sohya Kudoh, Shun'ichiro Ohmi

IEICE Trans. Electron., 2015