Snezana Golubovic

According to our database, Snezana Golubovic authored at least 16 papers between 2001 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress.

Sandra Veljkovic, Nikola Mitrovic, Vojkan Davidovic, Snezana Golubovic, Snezana Djoric-Veljkovic, Albena Paskaleva, Dencho Spassov, Srboljub Stankovic, Marko S. Andjelkovic, Zoran Prijic, Ivica Manic, Aneta Prijic, Goran S. Ristic, Danijel Dankovic

J. Circuits Syst. Comput., December, 2022

2018

NBTI and irradiation related degradation mechanisms in power VDMOS transistors.

Ninoslav Stojadinovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Srboljub Stankovic, Aneta Prijic, Zoran Prijic, Ivica Manic, Danijel Dankovic

Microelectron. Reliab., 2018

A review of pulsed NBTI in P-channel power VDMOSFETs.

Danijel Dankovic, Ivica Manic, Aneta Prijic, Vojkan Davidovic, Zoran Prijic, Snezana Golubovic, Snezana Djoric-Veljkovic, Albena Paskaleva, D. Spassov, Ninoslav Stojadinovic

Microelectron. Reliab., 2018

2011

NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions.

Ivica Manic, Danijel Dankovic, Aneta Prijic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Zoran Prijic, Ninoslav Stojadinovic

Microelectron. Reliab., 2011

2010

Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress.

Ninoslav Stojadinovic, Danijel Dankovic, Ivica Manic, Aneta Prijic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Zoran Prijic

Microelectron. Reliab., 2010

2009

Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs.

Ivica Manic, Danijel Dankovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic

Microelectron. Reliab., 2009

2008

Negative bias temperature instability in n-channel power VDMOSFETs.

Danijel Dankovic, Ivica Manic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Ninoslav Stojadinovic

Microelectron. Reliab., 2008

Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs.

Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Danijel Dankovic, Snezana Golubovic, Ninoslav Stojadinovic

IET Circuits Devices Syst., 2008

2007

Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs.

Danijel Dankovic, Ivica Manic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Ninoslav Stojadinovic

Microelectron. Reliab., 2007

2006

NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs.

Danijel Dankovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic

Microelectron. Reliab., 2006

2005

Effects of electrical stressing in power VDMOSFETs.

Ninoslav Stojadinovic, Ivica Manic, Vojkan Davidovic, Danijel Dankovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Sima Dimitrijev

Microelectron. Reliab., 2005

Negative bias temperature instability mechanisms in p-channel power VDMOSFETs.

Ninoslav Stojadinovic, Danijel Dankovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Ivica Manic, Snezana Golubovic

Microelectron. Reliab., 2005

2003

Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs.

Snezana Djoric-Veljkovic, Ivica Manic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic

Microelectron. Reliab., 2003

2002

Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs.

Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Sima Dimitrijev

Microelectron. Reliab., 2002

Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs.

Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Danijel Dankovic, Snezana Golubovic, Sima Dimitrijev

Microelectron. Reliab., 2002

2001

Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs.

Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Sima Dimitrijev

Microelectron. Reliab., 2001