Sk. Ziaur Rahaman

According to our database, Sk. Ziaur Rahaman authored at least 3 papers between 2010 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory.

Ming-Hung Wu, Ming-Chun Hong, Ching Shih, Yao-Jen Chang, Yu-Chen Hsin, Shih-Ching Chiu, Kuan-Ming Chen, Yi-Hui Su, Chih-Yao Wang, Shan-Yi Yang, Guan-Long Chen, Hsin-Han Lee, Sk. Ziaur Rahaman, I-Jung Wang, Chen-Yi Shih, Tsun-Chun Chang, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Tuo-Hung Hou

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer.

Ming-Chun Hong, Yao-Jen Chang, Yu-Chen Hsin, Liang-Ming Liu, Kuan-Ming Chen, Yi-Hui Su, Guan-Long Chen, Shan-Yi Yang, I-Jung Wang, Sk. Ziaur Rahaman, Hsin-Han Lee, Shih-Ching Chiu, Chen-Yi Shih, Chih-Yao Wang, Fang-Ming Chen, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Minn-Tsong Lin, Chih-I Wu, Tuo-Hung Hou

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2010

Low power resistive switching memory using Cu metallic filament in Ge_0.2Se_0.8 solid-electrolyte.

Sk. Ziaur Rahaman, Siddheswar Maikap

Microelectron. Reliab., 2010