Simon Martin

According to our database, Simon Martin authored at least 7 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays.

J. Laguerre, Simon Martin, Jean Coignus, Catherine Carabasse, Marc Bocquet, François Andrieu, Laurent Grenouillet

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Charge-based Sense Demonstration in 1T-1C HZO FeRAM Arrays to Overcome CBL-induced Bank Size Limitations.

Olivier Billoint, Simon Martin, J. Laguerre, L. Hosier, Jean Coignus, Catherine Carabasse, François Andrieu, Laurent Grenouillet

Proceedings of the IEEE International Memory Workshop, 2024

On the Impact of Overparameterization on the Training of a Shallow Neural Network in High Dimensions.

Simon Martin, Francis Bach, Giulio Biroli

Proceedings of the International Conference on Artificial Intelligence and Statistics, 2024

2023

Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited).

Laurent Grenouillet, Justine Barbot, J. Laguerre, Simon Martin, Catherine Carabasse, M. Louro, Messaoud Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, Thomas Magis, Carine Jahan, François Andrieu, Jean Coignus

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes.

J. Laguerre, Marc Bocquet, Olivier Billoint, Simon Martin, Jean Coignus, Catherine Carabasse, Thomas Magis, T. Dewolf, François Andrieu, Laurent Grenouillet

Proceedings of the IEEE International Memory Workshop, 2023

2021

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2021

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors.

Laurent Grenouillet, Niccolo Castellani, Alain Persico, Valentina Meli, Simon Martin, Olivier Billoint, R. Segaud, Stefania Bernasconi, C. Pellissier, Carine Jahan, Christelle Charpin-Nicolle, P. Dezest, Catherine Carabasse, Paul Besombes, Sebastien Ricavy, N. P. Tran, A. Magalhaes-Lucas, A. Roman, C. Boixaderas, Thomas Magis, Messaoud Bedjaoui, M. Tessaire, A. Seignard, F. Mazen, S. Landis, Elisa Vianello, Gabriel Molas, Fred Gaillard, Julien Arcamone, Etienne Nowak

Proceedings of the IEEE International Memory Workshop, 2021