Shuso Fujii

According to our database, Shuso Fujii authored at least 13 papers between 1996 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

An Embedded DRAM Technology for High-Performance NAND Flash Memories.

Daisaburo Takashima, Mitsuhiro Noguchi, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii

IEEE J. Solid State Circuits, 2012

2011

A Scalable Shield-Bitline-Overdrive Technique for Sub-1.5 V Chain FeRAMs.

Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama

IEEE J. Solid State Circuits, 2011

A 128 Mb Chain FeRAM and System Design for HDD Application and Enhanced HDD Performance.

Daisaburo Takashima, Yasushi Nagadomi, Kosuke Hatsuda, Yohji Watanabe, Shuso Fujii

IEEE J. Solid State Circuits, 2011

2010

A 64-Mb Chain FeRAM With Quad BL Architecture and 200 MB/s Burst Mode.

Katsuhiko Hoya, Daisaburo Takashima, Shinichiro Shiratake, Ryu Ogiwara, Tadashi Miyakawa, Hidehiro Shiga, Sumiko M. Doumae, Sumito Ohtsuki, Yoshinori Kumura, Susumu Shuto, Tohru Ozaki, Koji Yamakawa, Iwao Kunishima, Akihiro Nitayama, Shuso Fujii

IEEE Trans. Very Large Scale Integr. Syst., 2010

A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes.

Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama

IEEE J. Solid State Circuits, 2010

A scalable shield-bitline-overdrive technique for 1.3V Chain FeRAM.

Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama

Proceedings of the IEEE International Solid-State Circuits Conference, 2010

2009

A 1.6GB/s DDR2 128Mb chain FeRAM with scalable octal bitline and sensing schemes.

Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2006

Design of a 128-mb SOI DRAM using the floating body cell (FBC).

Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda, Tomoki Higashi, Tomoaki Shino, Yoshihiro Minami, Hiroomi Nakajima, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe, Shuso Fujii, Tohru Furuyama

IEEE J. Solid State Circuits, 2006

A 64Mb Chain FeRAM with Quad-BL Architecture and 200MB/s Burst Mode.

Katsuhiko Hoya, Daisaburo Takashima, Shinichiro Shiratake, Ryu Ogiwara, Tadashi Miyakawa, Hidehiro Shiga, Sumiko M. Doumae, Sumito Ohtsuki, Yoshinori Kumura, Susumu Shuto, Tohru Ozaki, Koji Yamakawa, Iwao Kunishima, Akihiro Nitayama, Shuso Fujii

Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006

2004

Post-Packaging Auto Repair Techniques for Fast Row Cycle Embedded DRAM.

Osamu Wada, Toshimasa Namekawa, Hiroshi Ito, Atsushi Nakayama, Shuso Fujii

Proceedings of the Proceedings 2004 International Test Conference (ITC 2004), 2004

1997

Flexible test mode approach for 256-Mb DRAM.

Toshiaki Kirihata, Hing Wong, John K. DeBrosse, Yohji Watanabe, Takahiko Hara, Munehiro Yoshida, Matthew R. Wordeman, Shuso Fujii, Yoshiaki Asao, Bo Krsnik

IEEE J. Solid State Circuits, 1997

1996

A 286 mm² 256 Mb DRAM with ×32 both-ends DQ.

Yohji Watanabe, Ring Wong, Toshiaki Kirihata, Daisuke Kato, John K. DeBrosse, Takahiko Rara, Munehiro Yoshida, Rideo Mukai, Khandker N. Quader, Takeshi Nagai, Peter Poechmueller, Peter Pfefferl, Matthew R. Wordeman, Shuso Fujii

IEEE J. Solid State Circuits, 1996

Fault-tolerant designs for 256 Mb DRAM.

Toshiaki Kirihata, Yohji Watanabe, Hing Wong, John K. DeBrosse, Munehiro Yoshida, Daisuke Kato, Shuso Fujii, Matthew R. Wordeman, Peter Poechmueller, Stephen A. Parke, Yoshiaki Asao

IEEE J. Solid State Circuits, 1996