Shun'ichiro Ohmi

According to our database, Shun'ichiro Ohmi authored at least 55 papers between 2002 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Digital/Analog-Operation of Hf-Based FeNOS Nonvolatile Memory Utilizing Ferroelectric Nondoped HfO₂ Blocking Layer.

Shun'ichiro Ohmi

IEICE Trans. Electron., 2024

2023

Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO₂ Gate Insulator for Analog Memory Application.

Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi

IEICE Trans. Electron., October, 2023

Foreword.

Shun'ichiro Ohmi

IEICE Trans. Electron., October, 2023

Precise VTH Control of MFSFET with 5 nm-thick FeND-HfO2 Realized by Kr-Plasma Sputtering for Pt Gate Electrode Deposition.

Shun'ichiro Ohmi, Masakazu Tanuma, Joong-Won Shin

Proceedings of the Device Research Conference, 2023

2022

The Effect of Inter Layers on the Ferroelectric Undoped HfO₂ Formation.

Masakazu Tanuma, Joong-Won Shin, Shun'ichiro Ohmi

IEICE Trans. Electron., October, 2022

MFSFET with 5nm Thick Ferroelectric Nondoped HfO₂ Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition.

Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi

IEICE Trans. Electron., October, 2022

Sputtering Gas Pressure Dependence on the LaB_xN_y Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer.

Eun-Ki Hong, Kyung Eun Park, Shun'ichiro Ohmi

IEICE Trans. Electron., October, 2022

Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation.

Joong-Won Shin, Masakazu Tanuma, J. Pyo, Shun'ichiro Ohmi

Proceedings of the Device Research Conference, 2022

MFSFET with Ferroelectric HfN for Analog Memory Application.

Shun'ichiro Ohmi, Akio Ihara, Masakazu Tanuma, Jooyoung Pyo, Joong-Won Shin

Proceedings of the Device Research Conference, 2022

2021

MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator.

Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi

Proceedings of the Device Research Conference, 2021

Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications.

Shun'ichiro Ohmi, Hiroki Morita, Masaki Hayashi, Akio Ihara, Jooyoung Pyo

Proceedings of the Device Research Conference, 2021

2020

The Influence of High-Temperature Sputtering on the N-Doped LaB₆ Thin Film Formation Utilizing RF Sputtering.

Kyung Eun Park, Shun'ichiro Ohmi

IEICE Trans. Electron., 2020

<i>In-Situ</i> N₂-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering.

Shun'ichiro Ohmi, Shin Ishimatsu, Yuske Horiuchi, Sohya Kudoh

IEICE Trans. Electron., 2020

The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process.

Rengie Mark D. Mailig, Min Gee Kim, Shun'ichiro Ohmi

IEICE Trans. Electron., 2020

Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO₂ Utilizing Pt Gate Electrodes.

Min Gee Kim, Masakazu Kataoka, Rengie Mark D. Mailig, Shun'ichiro Ohmi

IEICE Trans. Electron., 2020

High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory.

Kyung Eun Park, Shun'ichiro Ohmi

Proceedings of the 2020 Device Research Conference, 2020

Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering.

Shun'ichiro Ohmi, Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig

Proceedings of the 2020 Device Research Conference, 2020

2019

The Effect of Kr/O₂ Sputtering on the Ferroelectric Properties of SrBi₂Ta₂O₉ Thin Film Formation.

Binjian Zeng, Jiajia Liao, Qiangxiang Peng, Min Liao, Yichun Zhou, Shun'ichiro Ohmi

IEICE Trans. Electron., 2019

Etching Control of HfN Encapsulating Layer for PtHf-Silicide Formation with Dopant Segregation Process.

Shun'ichiro Ohmi, Yuya Tsukamoto, Rengie Mark D. Mailig

IEICE Trans. Electron., 2019

AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs.

Shun'ichiro Ohmi, Mizuha Hiroki, Yasutaka Maeda

IEICE Trans. Electron., 2019

Low Temperature Formation of Pd₂Si with TiN Encapsulating Layer and Its Application to Dopant Segregation Process.

Rengie Mark D. Mailig, Shun'ichiro Ohmi

IEICE Trans. Electron., 2019

The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO₂ Directly Deposited on Si(100).

Min Gee Kim, Shun'ichiro Ohmi

IEICE Trans. Electron., 2019

Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface Polarization.

Shun'ichiro Ohmi, Yizhe Ding, Sohya Kudoh

Proceedings of the Device Research Conference, 2019

2018

PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process.

Shun'ichiro Ohmi, Yuya Tsukamoto, Weiguang Zuo, Yasushi Masahiro

IEICE Trans. Electron., 2018

Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB₆ Bottom-Contact Electrodes.

Yasutaka Maeda, Mizuha Hiroki, Shun'ichiro Ohmi

IEICE Trans. Electron., 2018

Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H₂ Ambient.

Sohya Kudoh, Shun'ichiro Ohmi

IEICE Trans. Electron., 2018

Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory.

Sohya Kudoh, Shun'ichiro Ohmi

Proceedings of the 76th Device Research Conference, 2018

2017

PdYb-Silicide with Low Schottky Barrier Height to n-Si Formed from Pd/Yb/Si(100) Stacked Structures.

Shun'ichiro Ohmi, Mengyi Chen, Weiguang Zuo, Yasushi Masahiro

IEICE Trans. Electron., 2017

Effect of Nitrogen-Doped LaB₆ Interfacial Layer on Device Characteristics of Pentacene-Based OFET.

Yasutaka Maeda, Shun'ichiro Ohmi, Tetsuya Goto, Tadahiro Ohmi

IEICE Trans. Electron., 2017

2016

PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity.

Shun'ichiro Ohmi, Mengyi Chen, Xiaopeng Wu, Yasushi Masahiro

IEICE Trans. Electron., 2016

High Quality Pentacene Film Formation on N-Doped LaB₆ Donor Layer.

Yasutaka Maeda, Shun'ichiro Ohmi, Tetsuya Goto, Tadahiro Ohmi

IEICE Trans. Electron., 2016

A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics.

Sohya Kudoh, Shun'ichiro Ohmi

IEICE Trans. Electron., 2016

Investigation of bilayer HfN_x gate insulator utilizing ECR plasma sputtering.

Nithi Atthi, Shun'ichiro Ohmi

IEICE Electron. Express, 2016

2015

A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics.

Sohya Kudoh, Shun'ichiro Ohmi

IEICE Trans. Electron., 2015

In-situ formation of Hf-based MONOS structures for non-volatile memory applications.

Shun'ichiro Ohmi, Yeyuan Liu

IEICE Electron. Express, 2015

2014

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering.

Dae-Hee Han, Shun'ichiro Ohmi, Tomoyuki Suwa, Philippe Gaubert, Tadahiro Ohmi

IEICE Trans. Electron., 2014

Experimental demonstration of a ferroelectric FET using paper substrate.

Changhwan Shin, Gwang-Geun Lee, Dae-Hee Han, Seung-Pil Han, Eisuke Tokumitsu, Shun'ichiro Ohmi, Dong-Joo Kim, Hiroshi Ishiwara, Minseo Park, Seung-Hyun Kim, Wan-Gyu Lee, Yun Jeong Hwang, Byung-Eun Park

IEICE Electron. Express, 2014

Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system.

Shun'ichiro Ohmi

IEICE Electron. Express, 2014

2013

Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H₂ Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation.

Dae-Hee Han, Shun'ichiro Ohmi

IEICE Trans. Electron., 2013

Contact resistivity reduction for PtSi/Si(100) by dopant segregation process.

Shun'ichiro Ohmi, Jun Arima

IEICE Electron. Express, 2013

Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering.

Dae-Hee Han, Huiseong Han, Shun'ichiro Ohmi

IEICE Electron. Express, 2013

2012

Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors.

Min Liao, Hiroshi Ishiwara, Shun'ichiro Ohmi

IEICE Trans. Electron., 2012

Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering.

Huiseong Han, Shun'ichiro Ohmi

IEICE Electron. Express, 2012

2011

Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer.

Young-Uk Song, Hiroshi Ishiwara, Shun'ichiro Ohmi

IEICE Trans. Electron., 2011

Modulation of PtSi Work Function by Alloying with Low Work Function Metal.

Jun Gao, Jumpei Ishikawa, Shun'ichiro Ohmi

IEICE Trans. Electron., 2011

Selective etching of HfN gate electrode for HfN/HfSiON gate stack in-situ formations.

Takahiro Sano, Shun'ichiro Ohmi

IEICE Electron. Express, 2011

Low contact resistivity of barrier height controlled PtHfSi to Si evaluated by cross-bridge Kelvin resistor.

Shun'ichiro Ohmi, Jun Gao

IEICE Electron. Express, 2011

Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator.

Min Liao, Hiroshi Ishiwara, Shun'ichiro Ohmi

IEICE Electron. Express, 2011

Work function modulation of PtSi by alloying with Yb.

Jumpei Ishikawa, Jun Gao, Shun'ichiro Ohmi

IEICE Electron. Express, 2011

A study on precise control of PtSi work function by alloying with Hf.

Jun Gao, Jumpei Ishikawa, Shun'ichiro Ohmi

IEICE Electron. Express, 2011

2007

A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels.

Shun'ichiro Ohmi, Tetsushi Sakai

IEICE Trans. Electron., 2007

2006

Ultrathin HfO_xN_y Gate Insulator Formation by Electron Cyclotron Resonance Ar/N₂ Plasma Nitridation of HfO₂ Thin Films.

Shun'ichiro Ohmi, Tomoki Kurose, Masaki Satoh

IEICE Trans. Electron., 2006

2005

Electrical properties of vacuum annealed La₂O₃ thin films grown by E-beam evaporation.

Yongshik Kim, Kunihiro Miyauchi, Shun'ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai

Microelectron. J., 2005

Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications.

Takashi Yamazaki, Shun'ichiro Ohmi, Shinya Morita, Hiroyuki Ohri, Junichi Murota, Masao Sakuraba, Hiroo Omi, Tetsushi Sakai

IEICE Trans. Electron., 2005

2002

Silicon integrated circuit technology from past to future.

Hiroshi Iwai, Shun'ichiro Ohmi

Microelectron. Reliab., 2002