Shuhei Nagatsuka

According to our database, Shuhei Nagatsuka authored at least 2 papers between 2012 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2015

16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method.

Takanori Matsuzaki, Tatsuya Onuki, Shuhei Nagatsuka, Hiroki Inoue, Takahiko Ishizu, Yoshinori Ieda, Naoto Yamade, Hidekazu Miyairi, Masayuki Sakakura, Tomoaki Atsumi, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Yoshitaka Yamamoto, Masahiro Fujita, Jun Koyama, Shunpei Yamazaki

Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015

2012

Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor.

Hiroki Inoue, Takanori Matsuzaki, Shuhei Nagatsuka, Yutaka Okazaki, Toshinari Sasaki, Kousei Noda, Daisuke Matsubayashi, Takahiko Ishizu, Tatsuya Onuki, Atsuo Isobe, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Jun Koyama, Shunpei Yamazaki

IEEE J. Solid State Circuits, 2012