Shreya Kundu

According to our database1, Shreya Kundu authored at least 13 papers between 2018 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2024
Mitigating Line-Break Defectivity with a Sandwiched TiN or W Layer for Metal Pitch 18 NM Aspect Ratio 6 Semi-Damascene Interconnects.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Lowest IOFF < 3×10<sup>-21</sup> A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

First demonstration of Two Metal Level Semi-damascene Interconnects with Fully Self-aligned Vias at 18MP.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control.
Proceedings of the International Conference on IC Design and Technology, 2022

2021
Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application.
Proceedings of the IEEE International Memory Workshop, 2021

2018
SOT-MRAM 300mm integration for low power and ultrafast embedded memories.
CoRR, 2018

SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories.
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018


  Loading...