Shouzhuo Yang
Orcid: 0000-0003-0290-5412
According to our database1,
Shouzhuo Yang
authored at least 4 papers
between 2022 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
2022
2023
2024
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Bibliography
2024
Proceedings of the 22nd Non-Volatile Memory Technology Symposium, 2024
Optimized Polarization and Reduced Imprint: Integrating Ferroelectric Aluminum Co-Doped (Hf, Zr)O2 Films and Superlattices into the BEoL for FeMFET and FRAM Application.
Proceedings of the 22nd Non-Volatile Memory Technology Symposium, 2024
Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions.
Proceedings of the IEEE International Memory Workshop, 2024
2022
CoRR, 2022