Shosuke Fujii
According to our database1,
Shosuke Fujii
authored at least 7 papers
between 2018 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
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2024
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Bibliography
2024
A Vertical Channel-All-Around FeFET with Thermally Stable Oxide Semiconductor Achieving High ΔIon> 2µA/cell for 3D Stackable 4F<sup>2</sup> High Speed Memory.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
2023
Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond.
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023
2020
Breakdown Lifetime Analysis of HfO2-based Ferroelectric Tunnel Junction (FTJ) Memory for In-Memory Reinforcement Learning.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019
2018
Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI.
Proceedings of the 48th European Solid-State Device Research Conference, 2018