Shosuke Fujii

According to our database1, Shosuke Fujii authored at least 7 papers between 2018 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

2018
2019
2020
2021
2022
2023
2024
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1
2
3
1
2
1
1
2

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Other 

Links

On csauthors.net:

Bibliography

2024
A Vertical Channel-All-Around FeFET with Thermally Stable Oxide Semiconductor Achieving High ΔIon> 2µA/cell for 3D Stackable 4F<sup>2</sup> High Speed Memory.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023
Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond.
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2020
Breakdown Lifetime Analysis of HfO2-based Ferroelectric Tunnel Junction (FTJ) Memory for In-Memory Reinforcement Learning.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication.
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019

2018
Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI.
Proceedings of the 48th European Solid-State Device Research Conference, 2018


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