Shoichi Kabuyanagi

According to our database, Shoichi Kabuyanagi authored at least 4 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A Vertical Channel-All-Around FeFET with Thermally Stable Oxide Semiconductor Achieving High ΔIon> 2µA/cell for 3D Stackable 4F² High Speed Memory.

Shoichi Kabuyanagi, Takamasa Hamai, Masayuki Murase, Takeru Maeda, Masumi Saitoh, Shosuke Fujii

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2021

Modeling and spectroscopy of ovonic threshold switching defects.

Robin Degraeve, Taras Ravsher, Shoichi Kabuyanagi, Andrea Fantini, Sergiu Clima, Daniele Garbin, Gouri Sankar Kar

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2018

Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory.

Marina Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta, Shoichi Kabuyanagi, Tsunehiro Ino, Yasushi Nakasaki, Riichiro Takaishi, Reika Ichihara, Masumi Saitoh

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI.

Masumi Saitoh, Shosuke Fujii, Minoru Oda, Marina Yamaguchi, Shoichi Kabuyanagi, Yoko Yoshimura, Kensuke Ota, Kiwamu Sakuma, Yuuichi Kamimuta

Proceedings of the 48th European Solid-State Device Research Conference, 2018