Shiwei Feng

According to our database, Shiwei Feng authored at least 16 papers between 2013 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Workload variation compensation optimization of ring oscillator temperature measurement method and its application in field-programmable gate array.

Yaning Wang, Shiwei Feng, Xianliang Lv, Kun Bai, Shijie Pan, Zixuan Feng, Xiaozhuang Lu, Yinqi Zhou, Boyang Zhang

Microelectron. J., 2025

2024

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage.

Shijie Pan, Shiwei Feng, Xuan Li, Kun Bai, Xiaozhuang Lu, Xiang Zheng, Zixuan Feng, Yamin Zhang

IEEE Trans. Instrum. Meas., 2024

Automatic in-situ measurement of thermal resistance for GaN HEMTs.

Zhanwu Yao, Shiwei Feng, Xuan Li, Kun Bai, Xiaozhuang Lu, Binyu You, Shijie Pan, Yamin Zhang

Microelectron. J., 2024

Temperature rise detection in GaN high-electron-mobility transistors via gate-drain Schottky junction forward-conduction voltages.

Xiujuan Huang, Chunsheng Guo, Qian Wen, Shiwei Feng, Yamin Zhang

Microelectron. J., 2024

2023

Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection.

Xianwei Meng, Meng Zhang, Kun Duan, Xiang Zheng, Yuwei Zhai, Shiwei Feng, Yamin Zhang

IEEE Trans. Instrum. Meas., 2023

A numerical calibration of structure-function transient thermal measurement based on Cauer RC network.

Kun Bai, Shiwei Feng, Xuan Li, Shijie Pan, Xiaozhuang Lu, Zhihong Feng, Yamin Zhang

Microelectron. J., 2023

2021

Build-in compact and efficient temperature sensor array on field programmable gate array.

Sheng Wang, Shiwei Feng, Yuxuan Xiao, Chaoxu Hu, Shijie Pan

Microelectron. J., 2021

2017

Thermal evaluation of GaN-based HEMTs with various layer sizes and structural parameters using finite-element thermal simulation.

Zhiheng Liao, Chunsheng Guo, Ju Meng, Boyang Jiang, Li Gao, Ya Su, Ruomin Wang, Shiwei Feng

Microelectron. Reliab., 2017

Optimized thermal sensor allocation for field-programmable gate array temperature measurements based on self-heating test.

Jingwei Li, Shiwei Feng, Yamin Zhang, Chao Wang, Xin He

Microelectron. J., 2017

Influence of heat source size on thermal resistance of AlGaN/GaN HEMT.

Chunsheng Guo, Ju Meng, Zhiheng Liao, Shiwei Feng, Xun Wang, Lin Luo

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2016

Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy.

Xiang Zheng, Shiwei Feng, Yamin Zhang, Junwei Yang

Microelectron. Reliab., 2016

2015

The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes.

Hui Zhu, Kun Liu, Cong Xiong, Shiwei Feng, Chunsheng Guo

Microelectron. Reliab., 2015

All-digital thermal distribution measurement on field programmable gate array using ring oscillators.

Yuan Yue, Shiwei Feng, Chunsheng Guo, Xin Yan, Rui-Rui Feng

Microelectron. Reliab., 2015

The effect of external stress on the electrical characteristics of AlGaN/GaN HEMTs.

Kun Liu, Hui Zhu, Shiwei Feng, Lei Shi, Yamin Zhang, Chunsheng Guo

Microelectron. Reliab., 2015

Thermal investigation of LED array with multiple packages based on the superposition method.

Dong Shi, Shiwei Feng, Yamin Zhang, Yanbin Qiao, Bing Deng

Microelectron. J., 2015

2013

Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs.

Yamin Zhang, Shiwei Feng, Hui Zhu, Jianwei Zhang, Bing Deng

Microelectron. Reliab., 2013