Shinji Migita

According to our database, Shinji Migita authored at least 6 papers between 2012 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2015

PBTI for N-type tunnel FinFETs.

Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance.

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Proceedings of the 44th European Solid State Device Research Conference, 2014

Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration.

Shinji Migita, Takashi Matsukawa, Takahiro Mori, Koichi Fukuda, Yukinori Morita, Wataru Mizubayashi, Kazuhiko Endo, Yongxun Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations.

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Proceedings of the European Solid-State Device Research Conference, 2013

Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes.

Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Yuki Ishikawa, Shinji Migita, Yukinori Morita, Akihito Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO2 gate stacks.

Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Meishoku Masahara, Hiroyuki Ota

Proceedings of the 2012 European Solid-State Device Research Conference, 2012