Shinichi Hoshi

According to our database, Shinichi Hoshi authored at least 3 papers between 2006 and 2009.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2009

Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate.

Hideyuki Okita, Toshiharu Marui, Shinichi Hoshi, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shouhei Seki

IEICE Trans. Electron., 2009

2008

Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs.

Toshiharu Marui, Shinichi Hoshi, Masanori Itoh, Isao Tamai, Fumihiko Toda, Hideyuki Okita, Yoshiaki Sano, Shouhei Seki

IEICE Trans. Electron., 2008

2006

Influence of NH₃-Plasma Pretreatment before Si₃N₄ Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs.

Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Yoshiaki Sano, Shouhei Seki

IEICE Trans. Electron., 2006