Shin Yokoyama

According to our database, Shin Yokoyama authored at least 9 papers between 2002 and 2019.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2019

Hybrid Integration of Photonic Devices and CMOS Amplifiers.

Taichi Uruma, Tetsuo Tabei, Shin Yokoyama, Yoshiteru Amemiya, Tadashi Sato, Shinji Yamada, Kazushi Okada

Proceedings of the 2nd International Symposium on Devices, Circuits and Systems, 2019

Response Characteristics of Optical Waveguides Containing Diarylethene : * Note: Sub-titles are not captured in Xplore and should not be used.

Keisuke Tanimoto, Yoshiteru Amemiya, Shin Yokoyama

Proceedings of the 2nd International Symposium on Devices, Circuits and Systems, 2019

Heterogeneous integration of GaN device layer by epitaxial film bonding.

Mitsuhiko Ogihara, Shin Yokoyama, Yoshiteru Amemiya

Proceedings of the 2nd International Symposium on Devices, Circuits and Systems, 2019

Effect of Anti-Reflective Coating for Si Optical Resonator Biosensors.

Jun Maeda, Riku Funamoto, Yoshiteru Amemiya, Shin Yokoyama

Proceedings of the 2nd International Symposium on Devices, Circuits and Systems, 2019

2014

Improvement of Hump Phenomenon of Thin-Film Transistor by SiN_X Film.

Takahiro Kobayashi, Naoto Matsuo, Akira Heya, Shin Yokoyama

IEICE Trans. Electron., 2014

Study of charge retention mechanism for DNA memory FET.

Shoko Maeno, Naoto Matsuo, Shohei Nakamura, Akira Heya, Tadao Takada, Kazushige Yamana, Masataka Fukuyama, Shin Yokoyama

IEICE Electron. Express, 2014

2007

Fabrication of tunneling dielectric thin-film transistor with very thin SiN_x films onto source and drain.

Naoto Matsuo, Atsushi Fukushima, Kensaku Ohkura, Akira Heya, Shin Yokoyama

IEICE Electron. Express, 2007

2006

Evaluation of the Impact of Selfish Nodes in Ad Hoc Networks and Detection and Countermeasure Methods.

Shin Yokoyama, Yoshikazu Nakane, Osamu Takahashi, Eiichi Miyamoto

Proceedings of the 7th International Conference on Mobile Data Management (MDM 2006), 2006

2002

Atomic-layer-deposited silicon-nitride/SiO₂ stack--a highly potential gate dielectrics for advanced CMOS technology.

Anri Nakajima, Quazi D. M. Khosru, Takashi Yoshimoto, Shin Yokoyama

Microelectron. Reliab., 2002