Shigetoshi Sugawa

According to our database1, Shigetoshi Sugawa authored at least 54 papers between 2000 and 2022.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2022
Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution.
Sensors, 2022

2021
A Proposal of Analog Correlated Multiple Sampling with High Density Capacitors for Low Noise CMOS Image Sensors.
Proceedings of the Imaging Sensors and Systems 2021, online, January 11-28, 2021, 2021

2020
Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixel-wise Trench Capacitor Memory Array.
Sensors, 2020

An Optical Filter-Less CMOS Image Sensor with Differential Spectral Response Pixels for Simultaneous UV-Selective and Visible Imaging.
Sensors, 2020

Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors.
Proceedings of the Imaging Sensors and Systems 2020, 2020

2019
A 120-ke- Full-Well Capacity 160-µV/e- Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor.
Sensors, 2019

A Highly Robust Silicon Ultraviolet Selective Radiation Sensor Using Differential Spectral Response Method.
Sensors, 2019

2018
High Speed and Narrow-Bandpass Liquid Crystal Filter for Real-Time Multi Spectral Imaging Systems.
IEICE Trans. Electron., 2018

Reliability of MgO in magnetic tunnel junctions formed by MgO sputtering and Mg oxidation.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

A Preliminary Chip Evaluation toward Over 50Mfps Burst Global Shutter Stacked CMOS Image Sensor.
Proceedings of the Image Sensors and Imaging Systems 2018, 2018

2017
High Sensitivity and High Readout Speed Electron Beam Detector using Steep pn Junction Si diode for Low Acceleration Voltage.
Proceedings of the Image Sensors and Imaging Systems 2017, 2017

2016
A dead-time free global shutter CMOS image sensor with in-pixel LOFIC and ADC using pixel-wis e connections.
Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

A high sensitivity compact gas concentration sensor using UV light and charge amplifier circuit.
Proceedings of the 2016 IEEE SENSORS, Orlando, FL, USA, October 30 - November 3, 2016, 2016

190-1100 nm Waveband multispectral imaging system using high light resistance wide dynamic range CMOS image sensor.
Proceedings of the 2016 IEEE SENSORS, Orlando, FL, USA, October 30 - November 3, 2016, 2016

2015
A linear response single exposure CMOS image sensor with 0.5e<sup>-</sup> readout noise and 76ke<sup>-</sup> full well capacity.
Proceedings of the Symposium on VLSI Circuits, 2015

Analysis of pixel gain and linearity of CMOS image sensor using floating capacitor load readout operation.
Proceedings of the Image Sensors and Imaging Systems 2015, 2015

2014
Si image sensors with wide spectral response and high robustness to ultraviolet light exposure.
IEICE Electron. Express, 2014

A statistical evaluation of effective time constants of random telegraph noise with various operation timings of in-pixel source follower transistors.
Proceedings of the Image Sensors and Imaging Systems 2014, 2014

Ultra-high speed video capturing of time dependent dielectric breakdown of metal-oxide-silicon capacitor up to 10M frame per second.
Proceedings of the Image Sensors and Imaging Systems 2014, 2014

Pixel structure with 10 nsec fully charge transfer time for the 20m frame per second burst CMOS image sensor.
Proceedings of the Image Sensors and Imaging Systems 2014, 2014

A 1024×1 linear photodiode array sensor with fast readout speed flexible pixel-level integration time and high stability to UV light exposure.
Proceedings of the Image Sensors and Imaging Systems 2014, 2014

2013
A Global-Shutter CMOS Image Sensor With Readout Speed of 1-Tpixel/s Burst and 780-Mpixel/s Continuous.
IEEE J. Solid State Circuits, 2013

High-speed and highly accurate evaluation of electrical characteristics in MOSFETs.
Proceedings of 2013 International Conference on IC Design & Technology, 2013

A CMOS image sensor using floating capacitor load readout operation.
Proceedings of the Sensors, 2013

New analog readout architecture for low noise CMOS image sensors using column-parallel forward noise-canceling circuitry.
Proceedings of the Sensors, 2013

A statistical evaluation of low frequency noise of in-pixel source follower-equivalent transistors with various channel types and body bias.
Proceedings of the Sensors, 2013

A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack.
Proceedings of the Sensors, 2013

Color reproductivity improvement with additional virtual color filters for WRGB image sensor.
Proceedings of the Color Imaging XVIII: Displaying, 2013

2012
A global-shutter CMOS image sensor with readout speed of 1Tpixel/s burst and 780Mpixel/s continuous.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light.
Proceedings of the Sensors, 2012

2011
A prototype high-speed CMOS image sensor with 10, 000, 000 fps burst-frame rate and 10, 000 fps continuous-frame rate.
Proceedings of the Digital Photography VII, 2011

A robust color signal processing with wide dynamic range WRGB CMOS image sensor.
Proceedings of the Digital Photography VII, 2011

2010
Checker-pattern and shared two pixels LOFIC CMOS image sensors.
Proceedings of the 15th Asia South Pacific Design Automation Conference, 2010

A CMOS image sensor with 2.0-e<sup>-</sup> random noise and 110-ke<sup>-</sup> full well capacity using column source follower readout circuits.
Proceedings of the 15th Asia South Pacific Design Automation Conference, 2010

Checkered white-RGB color LOFIC CMOS image sensor.
Proceedings of the 15th Asia South Pacific Design Automation Conference, 2010

2009
A pixel-shared CMOS image sensor using lateral overflow gate.
Proceedings of the 35th European Solid-State Circuits Conference, 2009

2008
Accurate negative bias temperature instability lifetime prediction based on hole injection.
Microelectron. Reliab., 2008

A Wide DR and Linear Response CMOS Image Sensor With Three Photocurrent Integrations in Photodiodes, Lateral Overflow Capacitors, and Column Capacitors.
IEEE J. Solid State Circuits, 2008

A 200-µV/e<sup>-</sup> CMOS Image Sensor With 100-ke<sup>-</sup> Full Well Capacity.
IEEE J. Solid State Circuits, 2008

An optimum design of the LOFIC CMOS image sensor for high sensitivity, low noise, and high full well capacity.
Proceedings of the Digital Photography IV, San Jose, CA, USA, January 28-29, 2008, 2008

2007
Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction.
Microelectron. Reliab., 2007

High quality gate insulator film formation on SiC using by microwave-excited high-density plasma.
Microelectron. Reliab., 2007

Circuit level prediction of device performance degradation due to negative bias temperature stress.
Microelectron. Reliab., 2007

A Rapid Prototyping of Real-Time Pattern Generator for Step-and-Scan Lithography Using Digital Micromirror Device.
Proceedings of the 2007 International Conference on Field-Programmable Technology, 2007

Improving Execution Speed of FPGA using Dynamically Reconfigurable Technique.
Proceedings of the 12th Conference on Asia South Pacific Design Automation, 2007

2006
High quality silicon nitride deposited by Ar/N<sub>2</sub>/H<sub>2</sub>/SiH<sub>4</sub> high-density and low energy plasma at low temperature.
Microelectron. J., 2006

A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor.
IEEE J. Solid State Circuits, 2006

A 200dB Dynamic Range Iris-less CMOS Image Sensor with Lateral Overflow Integration Capacitor using Hybrid Voltage and Current Readout Operation.
Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006

2003
A still-image encoder based on adaptive resolution vector quantization featuring needless calculation elimination architecture.
IEEE J. Solid State Circuits, 2003

A still image encoder based on adaptive resolution vector quantization employing needless calculation elimination architecture.
Proceedings of the 2003 Asia and South Pacific Design Automation Conference, 2003

2001
New paradigm of silicon technology.
Proc. IEEE, 2001

2000
A parallel vector-quantization processor eliminating redundant calculations for real-time motion picture compression.
IEEE J. Solid State Circuits, 2000


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