Shigeru Atsumi
According to our database1,
Shigeru Atsumi
authored at least 8 papers
between 1994 and 2002.
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Collaborative distances:
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Bibliography
2002
A 44-mm<sup>2</sup> four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller.
IEEE J. Solid State Circuits, 2002
High-voltage transistor scaling circuit techniques for high-density negative-gate channel-erasing NOR flash memories.
IEEE J. Solid State Circuits, 2002
2001
IEEE J. Solid State Circuits, 2001
2000
IEEE J. Solid State Circuits, 2000
A channel-erasing 1.8-V-only 32-Mb NOR flash EEPROM with a bitline direct sensing scheme.
IEEE J. Solid State Circuits, 2000
1999
IEEE J. Solid State Circuits, 1999
IEEE J. Solid State Circuits, 1999
1994
A 16-Mb flash EEPROM with a new self-data-refresh scheme for a sector erase operation.
IEEE J. Solid State Circuits, April, 1994