Shigeomi Hishiki

Orcid: 0000-0002-7600-293X

According to our database¹, Shigeomi Hishiki authored at least 3 papers between 2021 and 2022.

Collaborative distances:

Dijkstra number² of six.
Erdős number³ of five.

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PhD thesis

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Bibliography

2022

AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications.

[BibT_eX]

[DOI]

IEICE Trans. Electron., October, 2022

Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2022

2021

A Temperature Stable Amplifier Characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si.

[BibT_eX]

[DOI]

IEEE Access, 2021

Shigeomi Hishiki

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