Shenglei Zhao

According to our database, Shenglei Zhao authored at least 7 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance.

Jiaweiwen Huang, Wensuo Chen, Shenglei Zhao, Qisheng Yu, Aohang Zhang, Kunfeng Zhu, Jian Li

Microelectron. J., 2024

2023

High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation.

Yutong Fan, Xi Liu, Ren Huang, Yu Wen, Weihang Zhang, Jincheng Zhang, Zhihong Liu, Shenglei Zhao

Sci. China Inf. Sci., December, 2023

Incipient Fault Detection in a Hydraulic System Using Canonical Variable Analysis Combined with Adaptive Kernel Density Estimation.

Jinxin Wang, Shenglei Zhao, Enyuan Wang, Jiyun Zhao, Xiaofei Liu, Zhonghui Li

Sensors, October, 2023

2022

Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate.

Dujun Zhao, Zhaoxi Wu, Chao Duan, Bo Mei, Zhongyang Li, Zhongxu Wang, Qing Tang, Qing Yang, Yinhe Wu, Weihang Zhang, Zhihong Liu, Shenglei Zhao, Jincheng Zhang, Yue Hao

Sci. China Inf. Sci., 2022

Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs.

Yinhe Wu, Jincheng Zhang, Shenglei Zhao, Zhaoxi Wu, Zhongxu Wang, Bo Mei, Chao Duan, Dujun Zhao, Weihang Zhang, Zhihong Liu, Yue Hao

Sci. China Inf. Sci., 2022

Unidirectional p-GaN gate HEMT with composite source-drain field plates.

Haiyong Wang, Wei Mao, Shenglei Zhao, Yuanhao He, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao

Sci. China Inf. Sci., 2022

2021

Sensor Fault Diagnosis Based on Adaptive Arc Fuzzy DBN-Petri Net.

Shenglei Zhao, Jiming Li, Xuezhen Cheng

IEEE Access, 2021