Sheng-Kai Fan

According to our database¹, Sheng-Kai Fan authored at least 11 papers between 2013 and 2020.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

Timeline

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PhD thesis

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On csauthors.net:

Bibliography

2020

ESD-capability Enhancement of Ultra-high Voltage nLDMOSs by the DPW Discrete Layer.

[BibT_eX]

[DOI]

Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020

ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient.

[BibT_eX]

[DOI]

Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020

Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky Devices.

[BibT_eX]

[DOI]

Proceedings of the 3rd IEEE International Conference on Knowledge Innovation and Invention, 2020

Improving the ESD Robustness of an Ultra-high Voltage nLDMOS Device with the Embedded Schottky Diode.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020

ESD-capability Influences of UHV Circular nLDMOS Transistors by the Drain-side Ladder-step STI.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020

A Novel SCR-based Schottky Diode and Lightly P-well Additions of HV 60V nLDMOS on ESD Capability.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2020

2019

ESD-Reliability Investigation <sup>1</sup>of an UHV Elliptical LDMOS-SCR by the Drain-Side Junction Replacement.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2019

Channel- & Drift Region's STI-Lengths Impacts of ESD Immunity in HV 60 V nLDMOS Devices.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Conference on Consumer Electronics - Taiwan, 2019

Evaluating the Drift-Region Length Effect of nLDMOS on ESD Ability with a TLP Testing System.

[BibT_eX]

[DOI]

Proceedings of the IEEE 8th Global Conference on Consumer Electronics, 2019

ESD Immunity Impacts of the Drain-Side Heterojunction Device Addition in HV 60 V n/pLDMOS Devices.

[BibT_eX]

[DOI]

Proceedings of the IEEE 8th Global Conference on Consumer Electronics, 2019

2013

Temperature instability of amorphous In-Ga-Zn-O thin film transistors.

[BibT_eX]

[DOI]

Proceedings of the 6th IEEE International Conference on Advanced Infocomm Technology, 2013

Sheng-Kai Fan

Timeline

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