Sheng-Hsi Hung
Orcid: 0009-0007-0941-6976
According to our database1,
Sheng-Hsi Hung
authored at least 14 papers
between 2021 and 2025.
Collaborative distances:
Collaborative distances:
Timeline
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Book In proceedings Article PhD thesis Dataset OtherLinks
On csauthors.net:
Bibliography
2025
Monolithic GaN-Based Multiple-Phase Bidirectional Energy Transfer With Seamless Control Applied on High-Voltage and Low-Voltage Batteries.
IEEE Trans. Circuits Syst. I Regul. Pap., January, 2025
2024
98.7% Efficiency 1200-48 V LLC Converter Using Triple Step-Down Converter With One-Inductor Technique Compliant With EVSE Level 1.
IEEE J. Solid State Circuits, December, 2024
A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch.
IEEE J. Solid State Circuits, August, 2024
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
A 15.4ppm/<sup>○</sup>C GaN-based Voltage Reference with Process-Variation-Immunity and High PSR for EV Power Systems.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
A Monolithic GaN-based Gate Driver for LLC-SRC with Three-Phase Startup Clamping Achieving 23.2μA IQ and 98.6% Peak Efficiency.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
31.4 98.7% Efficiency 1200V-to-48V LLC Converter with CC/CV Mode Charging Compliant with EVSE Level 1.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
A -10 to -20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-μA Leakage Current V<sub>th</sub> Tracking Technique for 20-MHz Depletion-Mode GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors.
IEEE J. Solid State Circuits, February, 2023
A 4-40 V Wide Input Range Boost Converter With the Protection Re-Cycling Technique for 200 W High Power LiDAR System in a Long-Distance Object Detection.
IEEE J. Solid State Circuits, 2023
Multiple-Phase Accelerated Current Control in Bidirectional Energy Transfer of Automotive High-Voltage and Low-Voltage Batteries.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
A GaN Gate Driver with On-chip Adaptive On-time Controller and Negative Current Slope Detector.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
2022
Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control.
IEEE J. Solid State Circuits, 2022
A Monolithic GaN-Based Driver and GaN Power HEMT with Diode-Emulated GaN Technique for 50MHz Operation and Sub-0.2ns Deadtime Control.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2021
Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch With Temperature-Compensated Fast Turn-on Technique for Achieving Switching Frequency of 50 MHz and Slew Rate of 118.3 V/Ns.
IEEE J. Solid State Circuits, 2021