Shee-Jier Chueh

According to our database, Shee-Jier Chueh authored at least 3 papers between 2022 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at VOV=VDS=0.5V.

Yi-Chun Liu, Yu-Rui Chen, Yun-Wen Chen, Hsin-Cheng Lin, Wan-Hsuan Hsieh, Chien-Te Tu, Bo-Wei Huang, Wei-Jen Chen, Chun-Yi Cheng, Shee-Jier Chueh, Chee Wee Liu

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles.

Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Wan-Hsuan Hsieh, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, Shee-Jier Chueh, Yifan Xing, Guan-Hua Chen, Hung-Chun Chou, Dong Soo Woo, Min-Hung Lee, Chee Wee Liu

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies.

Chung-En Tsai, Chun-Yi Cheng, Bo-Wei Huang, Hsin-Cheng Lin, Tao Chou, Chien-Te Tu, Yi-Chun Liu, Sun-Rong Jan, Yu-Rui Chen, Wan-Hsuan Hsieh, Kung-Ying Chiu, Shee-Jier Chueh, Chee Wee Liu

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022