Shamiul Alam

Orcid: 0000-0002-3126-1399

According to our database1, Shamiul Alam authored at least 34 papers between 2020 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Design Space Exploration for Phase Transition Material-Augmented MRAMs With Separate Read-Write Paths.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., January, 2024

Harnessing Ferro-Valleytricity in Penta-Layer Rhombohedral Graphene for Memory and Compute.
CoRR, 2024

A Review on Digital Pixel Sensors.
CoRR, 2024

CMOS-Based Single-Cycle in-Memory XOR/XNOR.
IEEE Access, 2024

Compact Model of a Topological Transistor.
IEEE Access, 2024

Quantum Anomalous Hall Effect Ternary Content Addressable Memory.
Proceedings of the IEEE Computer Society Annual Symposium on VLSI, 2024

Ultra-Area-Efficient Cryogenic XNOR Logic Gate with Superconducting Heater Cryotron to Advance High-Performance Computing.
Proceedings of the Great Lakes Symposium on VLSI 2024, 2024

2023
Machine Learning-powered Compact Modeling of Stochastic Electronic Devices using Mixture Density Networks.
CoRR, 2023

Reimagining Sense Amplifiers: Harnessing Phase Transition Materials for Current and Voltage Sensing.
CoRR, 2023

A Deep Dive into the Design Space of a Dynamically Reconfigurable Cryogenic Spiking Neuron.
CoRR, 2023

Superconducting Heater Cryotron-Based Reconfigurable Logic Towards Cryogenic IC Camouflaging.
CoRR, 2023

Cryogenic In-Memory Bit-Serial Addition Using Quantum Anomalous Hall Effect-Based Majority Logic.
IEEE Access, 2023

Quantum Anomalous Hall Effect-Based Variation Robust Binary Content Addressable Memory.
Proceedings of the 66th IEEE International Midwest Symposium on Circuits and Systems, 2023

Cryogenic In-memory Binary Multiplier Using Quantum Anomalous Hall Effect Memories.
Proceedings of the 24th International Symposium on Quality Electronic Design, 2023

A Novel Scalable Array Design for III-V Compound Semiconductor-based Nonvolatile Memory (UltraRAM) with Separate Read-Write Paths.
Proceedings of the 24th International Symposium on Quality Electronic Design, 2023

A Cryogenic Artificial Synapse based on Superconducting Memristor.
Proceedings of the Great Lakes Symposium on VLSI 2023, 2023

Ternary In-Memory Computing with Cryogenic Quantum Anomalous Hall Effect Memories.
Proceedings of the Great Lakes Symposium on VLSI 2023, 2023

Reconfigurable Superconducting Logic Using Multi-Gate Switching of a Nano-Cryotron.
Proceedings of the Device Research Conference, 2023

Cryogenic In-Memory Matrix-Vector Multiplication using Ferroelectric Superconducting Quantum Interference Device (FE-SQUID).
Proceedings of the 60th ACM/IEEE Design Automation Conference, 2023

2022
Voltage-controlled Cryogenic Boolean Logic Family Based on Ferroelectric SQUID.
CoRR, 2022

CMOS-Compatible Ising Machines built using Bistable Latches Coupled through Ferroelectric Transistor Arrays.
CoRR, 2022

Cryogenic Neuromorphic Hardware.
CoRR, 2022

A Privacy-Protecting Framework of Autonomous Contact Tracing for SARS-CoV-2 and Beyond.
CoRR, 2022

A Generalized Workflow for Creating Machine Learning-Powered Compact Models for Multi-State Devices.
IEEE Access, 2022

Variation-aware Design Space Exploration of Mott Memristor-based Neuristors.
Proceedings of the IEEE Computer Society Annual Symposium on VLSI, 2022

Design Space Analysis of Superconducting Nanowire-based Cryogenic Oscillators.
Proceedings of the Device Research Conference, 2022

Cryogenic Memory Array based on Ferroelectric SQUID and Heater Cryotron.
Proceedings of the Device Research Conference, 2022

Superconducting Josephson Junction FET-based Cryogenic Voltage Sense Amplifier.
Proceedings of the Device Research Conference, 2022

2021
CryoCiM: Cryogenic Compute-in-Memory based on the Quantum Anomalous Hall Effect.
CoRR, 2021

Cryogenic Memory Technologies.
CoRR, 2021

An Oscillator-based MaxSAT solver.
CoRR, 2021

A Three-terminal Non-Volatile Ferroelectric Switch with an Insulator-Metal Transition Channel.
CoRR, 2021

Monte Carlo Variation Analysis of NCFET-based 6-T SRAM: Design Opportunities and Trade-offs.
Proceedings of the GLSVLSI '21: Great Lakes Symposium on VLSI 2021, 2021

2020
A Non-Volatile Cryogenic Random-Access Memory Based on the Quantum Anomalous Hall Effect.
CoRR, 2020


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