Shahadat Hasan Sohel

According to our database, Shahadat Hasan Sohel authored at least 3 papers between 2018 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

RF Performance of 130 nm Al0.75Ga0.25N/Al0.6Ga0.4N HFETs with MBE-Regrown Contacts.

Hao Xue, Choong Hee Lee, Kamal Hussian, Towhidur Razzak, Mamun Abdullah, Zhanbo Xia, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu

Proceedings of the Device Research Conference, 2019

Epitaxial passivation of delta doped $\beta$ -Ga2O3 field effect transistors.

Chandan Joishi, Zhanbo Xia, Shahadat Hasan Sohel, Saurabh Lodha, Siddharth Rajan

Proceedings of the Device Research Conference, 2019

2018

All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs.

Hao Xue, Towhidur Razzak, Seongmo Hwang, Antwon Coleman, Sanyam Bajaj, Yuewei Zhang, Zane Jamal-Eddin, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu

Proceedings of the 76th Device Research Conference, 2018