Seungpil Lee

According to our database, Seungpil Lee authored at least 13 papers between 2008 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

ARCLE: The Abstraction and Reasoning Corpus Learning Environment for Reinforcement Learning.

Hosung Lee, Sejin Kim, Seungpil Lee, Sanha Hwang, Jihwan Lee, Byung-Jun Lee, Sundong Kim

CoRR, 2024

Reasoning Abilities of Large Language Models: In-Depth Analysis on the Abstraction and Reasoning Corpus.

Seungpil Lee, Woochang Sim, Donghyeon Shin, Sanha Hwang, Wongyu Seo, Jiwon Park, Seokki Lee, Sejin Kim, Sundong Kim

CoRR, 2024

From Generation to Selection: Findings of Converting Analogical Problem-Solving into Multiple-Choice Questions.

Donghyeon Shin, Seungpil Lee, Klea Kovacec, Sundong Kim

Proceedings of the Findings of the Association for Computational Linguistics: EMNLP 2024, 2024

2023

A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $\mathsf{i}$.

Bvunarvul Kim, Seungpil Lee, Beomseok Hah, Kanawoo Park, Yongsoon Park, Kangwook Jo, Yujong Noh, Hyeon-Cheon Seol, Hyunsoo Lee, Jae-Hyeon Shin, Seongjin Choi, Youngdon Jung, Sungho Ahn, Yonghun Park, Sujeong Oh, Myungsu Kim, Seonauk Kim, Hyunwook Park, Taeho Lee, Haeun Won, Minsung Kim, Cheulhee Koo, Yeonjoo Choi, Suyoung Choi, Sechun Park, Dongkyu Youn, Junyoun Lim, Wonsun Park, Hwang Hur, Kichang Kwean, Hongsok Choi, Woopyo Jeong, Sungyong Chung, Jungdal Choi, Seonyong Cha

Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2022

A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density.

Wanik Cho, Jongseok Jung, Jongwoo Kim, Junghoon Nam, Sangkyu Lee, Yujong Noh, Dauni Kim, Wanseob Lee, Kayoung Cho, Kwanho Kim, Heejoo Lee, Sooyeol Chai, Eunwoo Jo, Hanna Cho, Jong-Seok Kim, Chankeun Kwon, Cheolioona Park, Hveonsu Nam, Haeun Won, Taeho Kim, Kyeonghwan Park, Sanghoon Oh, Jinhyun Ban, Junyoung Park, Jae-Hyeon Shin, Taisik Shin, Junseo Jang, Jiseong Mun, Jehyun Choi, Hyunseung Choi, Sung-Wook Choi, Wonsun Park, Dongkvu Yoon, Minsu Kim, Junyoun Lim, Chiwook An, Hyunyoung Shirr, Haesoon Oh, Haechan Park, Sungbo Shim, Hwang Huh, Honasok Choi, Seungpil Lee, Jaesuna Sim, Kichan Gwon, Jumsoo Kim, Woopyo Jeong, Jungdal Choi, Kyowon Jin

Proceedings of the IEEE International Solid-State Circuits Conference, 2022

2021

A 176-Stacked 512Gb 3b/Cell 3D-NAND Flash with 10.8Gb/mm² Density with a Peripheral Circuit Under Cell Array Architecture.

Jae-Woo Park, Doogon Kim, Sunghwa Ok, Jaebeom Park, Taeheui Kwon, Hyunsoo Lee, Sungmook Lim, Sun-Young Jung, Hyeong-Jin Choi, Taikyu Kang, Gwan Park, Chul-Woo Yang, Jeong-Gil Choi, Gwihan Ko, Jae-Hyeon Shin, Ingon Yang, Junghoon Nam, Hyeokchan Sohn, Seok-in Hong, Yohan Jeong, Sung-Wook Choi, Changwoon Choi, Hyun-Soo Shin, Junyoun Lim, Dongkyu Youn, Sanghyuk Nam, Juyeab Lee, Myungkyu Ahn, Hoseok Lee, Seungpil Lee, Jongmin Park, Kichang Gwon, Woopyo Jeong, Jungdal Choi, Jinkook Kim, Kyowon Jin

Proceedings of the IEEE International Solid-State Circuits Conference, 2021

2019

A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology.

Chang Hua Siau, Kwang-Ho Kim, Seungpil Lee, Katsuaki Isobe, Noboru Shibata, Kapil Verma, Takuya Ariki, Jason Li, Jong Yuh, Anirudh Amarnath, Qui Nguyen, Ohwon Kwon, Stanley Jeong, Heguang Li, Hua-Ling Hsu, Taiyuan Tseng, Steve Choi, Siddhesh Darne, Pradeep Anantula, Alex Yap, Hardwell Chibvongodze, Hitoshi Miwa, Minoru Yamashita, Mitsuyuki Watanabe, Koichiro Hayashi, Yosuke Kato, Toru Miwa, Jang Yong Kang, Masatoshi Okumura, Naoki Ookuma, Muralikrishna Balaga, Venky Ramachandra, Aki Matsuda, Swaroop Kulkarni, Raghavendra Rachineni, Pai K. Manjunath, Masahito Takehara, Anil Pai, Srinivas Rajendra, Toshiki Hisada, Ryo Fukuda, Naoya Tokiwa, Kazuaki Kawaguchi, Masashi Yamaoka, Hiromitsu Komai, Takatoshi Minamoto, Masaki Unno, Susumu Ozawa, Hiroshi Nakamura, Tomoo Hishida, Yasuyuki Kajitani, Lei Lin

Proceedings of the IEEE International Solid- State Circuits Conference, 2019

2018

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology.

Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Naohito Morozumi, Ryo Fukuda, Yuui Shimizu, Toshifumi Hashimoto, Xu Li, Yuki Shimizu, Kenichi Abe, Tadashi Yasufuku, Takatoshi Minamoto, Hiroshi Yoshihara, Takahiro Yamashita, Kazuhiko Satou, Takahiro Sugimoto, Fumihiro Kono, Mitsuhiro Abe, Tomoharu Hashiguchi, Masatsugu Kojima, Yasuhiro Suematsu, Takahiro Shimizu, Akihiro Imamoto, Naoki Kobayashi, Makoto Miakashi, Kouichirou Yamaguchi, Sanad Bushnaq, Hicham Haibi, Masatsugu Ogawa, Yusuke Ochi, Kenro Kubota, Taichi Wakui, Dong He, Weihan Wang, Hiroe Minagawa, Tomoko Nishiuchi, Hao Nguyen, Kwang-Ho Kim, Ken Cheah, Yee Lih Koh, Feng Lu, Venky Ramachandra, Srinivas Rajendra, Steve Choi, Keyur Payak, Namas Raghunathan, Spiros Georgakis, Hiroshi Sugawara, Seungpil Lee, Takuya Futatsuyama, Koji Hosono, Noboru Shibata, Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2012

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode.

Yan Li, Seungpil Lee, Ken Oowada, Hao Nguyen, Qui Nguyen, Nima Mokhlesi, Cynthia Hsu, Jason Li, Venky Ramachandra, Teruhiko Kamei, Masaaki Higashitani, Tuan Pham, Mitsuaki Honma, Yoshihisa Watanabe, Kazumi Ino, Binh Le, Byungki Woo, Khin Htoo, Taiyuan Tseng, Long Pham, Frank Tsai, Kwang-Ho Kim, Yi-Chieh Chen, Min She, Jonghak Yuh, Alex Chu, Chen Chen, Ruchi Puri, Hung-Szu Lin, Yi-Fang Chen, William Mak, Jonathan Huynh, Jim Chan, Mitsuyuki Watanabe, Daniel Yang, Grishma Shah, Pavithra Souriraj, Dinesh Tadepalli, Tenugu Suman, Ray Gao, Viski Popuri, Behdad Azarbayjani, Ravindra Madpur, James Lan, Emilio Yero, Feng Pan, Patrick Hong, Jang Yong Kang, Farookh Moogat, Yupin Fong, Raul Cernea, Sharon Huynh, Cuong Trinh, Mehrdad Mofidi, Ritu Shrivastava, Khandker Quader

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2009

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate.

Yan Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Jongmin Park, Tapan Samaddar, Hao Nguyen, Man Mui, Khin Htoo, Teruhiko Kamei, Masaaki Higashitani, Emilio Yero, Gyuwan Kwon, Phil Kliza, Jun Wan, Tetsuya Kaneko, Hiroshi Maejima, Hitoshi Shiga, Makoto Hamada, Norihiro Fujita, Kazunori Kanebako, Eugene Tam, Anne Koh, Iris Lu, Calvin Chia-Hong Kuo, Trung Pham, Jonathan Huynh, Qui Nguyen, Hardwell Chibvongodze, Mitsuyuki Watanabe, Ken Oowada, Grishma Shah, Byungki Woo, Ray Gao, Jim Chan, James Lan, Patrick Hong, Liping Peng, Debi Das, Dhritiman Ghosh, Vivek Kalluru, Sanjay Kulkarni, Raul-Adrian Cernea, Sharon Huynh, Dimitris Pantelakis, Chi-Ming Wang, Khandker Quader

IEEE J. Solid State Circuits, 2009

A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS.

Cuong Trinh, Noboru Shibata, Takeshi Nakano, Mikio Ogawa, Jumpei Sato, Yoshikazu Takeyama, Katsuaki Isobe, Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei, Kiyoaki Iwasa, J. Nakai, Takahiro Shimizu, Mitsuaki Honma, Shintaro Sakai, Toshimasa Kawaai, Satoru Hoshi, Jonghak Yuh, Cynthia Hsu, Taiyuan Tseng, Jason Li, Jayson Hu, M. Liu, Shahzad Khalid, J. Chen, Mitsuyuki Watanabe, Hung-Szu Lin, Junhui Yang, K. McKay, Khanh Nguyen, Tuan Pham, Y. Matsuda, K. Nakamura, Kazunori Kanebako, Susumu Yoshikawa, W. Igarashi, Atsushi Inoue, T. Takahashi, Yukio Komatsu, C. Suzuki, Kousuke Kanazawa, Masaaki Higashitani, Seungpil Lee, T. Murai, K. Nguyen, James Lan, Sharon Huynh, Mark Murin, Mark Shlick, Menahem Lasser, Raul Cernea, Mehrdad Mofidi, K. Schuegraf, Khandker Quader

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

A 113mm2 32Gb 3b/cell NAND flash memory.

Takuya Futatsuyama, Norihiro Fujita, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Teruhiko Kamei, Hiroaki Nasu, Makoto Iwai, Koji Kato, Yasuyuki Fukuda, Naoaki Kanagawa, Naofumi Abiko, Masahide Matsumoto, Toshihiko Himeno, Toshifumi Hashimoto, Yi-Ching Liu, Hardwell Chibvongodze, Takamitsu Hori, Manabu Sakai, Hong Ding, Yoshiharu Takeuchi, Hitoshi Shiga, Norifumi Kajimura, Yasuyuki Kajitani, Kiyofumi Sakurai, Kosuke Yanagidaira, Toshihiro Suzuki, Yuko Namiki, Tomofumi Fujimura, Man Mui, Hao Nguyen, Seungpil Lee, Alex Mak, Jeffery Lutze, Tooru Maruyama, Toshiharu Watanabe, Takahiko Hara, Shigeo Ohshima

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2008

A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate.

Yan Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Jong Park, Tapan Samaddar, Hao Nguyen, Man Mui, Khin Htoo, Teruhiko Kamei, Masaaki Higashitani, Emilio Yero, Gyuwan Kwon, Phil Kliza, Jun Wan, Tetsuya Kaneko, Hiroshi Maejima, Hitoshi Shiga, Makoto Hamada, Norihiro Fujita, Kazunori Kanebako, Eugene Tam, Anne Koh, Iris Lu, Calvin Chia-Hong Kuo, Trung Pham, Jonathan Huynh, Qui Nguyen, Hardwell Chibvongodze, Mitsuyuki Watanabe, Ken Oowada, Grishma Shah, Byungki Woo, Ray Gao, Jim Chan, James Lan, Patrick Hong, Liping Peng, Debi Das, Dhritiman Ghosh, Vivek Kalluru, Sanjay Kulkarni, Raul Cernea, Sharon Huynh, Dimitris Pantelakis, Chi-Ming Wang, Khandker Quader

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008