Seung Wook Ryu

According to our database, Seung Wook Ryu authored at least 3 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

BEOL Compatible Ultra-Low Operating Voltage (0.5 V) and Preconfigured Switching Polarization States in Effective 3 nm Ferroelectric HZO Capacitors.

Minjong Lee, Jin-Hyun Kim, Dan N. Le, Seojun Lee, Si-Un Song, Rino Choi, Youngbae Ahn, Seung Wook Ryu, Pil-Ryung Cha, Chang-Yong Nam, Seongbin Park, Jongmug Kang, Si Joon Kim, Jiyoung Kim

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Demonstration of crystalline IGZO transistor with high thermal stability for memory applications.

Whayoung Kim, Jaehyeon Kim, Dongjin Ko, Jun-Hwe Cha, Gyeongcheol Park, Youngbae Ahn, Jong-Young Lee, Minchul Sung, Hyejung Choi, Seung Wook Ryu, Seiyon Kim, Myung-Hee Na, Seonyong Cha

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges.

Jae-Gil Lee, Joongsik Kim, Dong Ik Suh, Ildo Kim, Gwon Deok Han, Seung Wook Ryu, Seho Lee, Myung-Hee Na, Seonyong Cha, Hyeon Woo Park, Cheol Seong Hwang

Proceedings of the IEEE International Memory Workshop, 2022