Seung-Geol Nam

According to our database, Seung-Geol Nam authored at least 5 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer.

Sijung Yoo, Donghoon Kim, Duk-Hyun Choe, Hyun Jae Lee, Yunseong Lee, Sanghyun Jo, Yoonsang Park, Ki Hong Kim, Kyooho Jung, Moonil Jung, Kwang-Hee Lee, Jee-Eun Yang, Sangwook Kim, Seung-Geol Nam

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND.

Ilho Myeong, Suhwan Lim, Taeyoung Kim, Sanghyun Park, Suseong Noh, Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Munkang Choi, Kiheun Lee, Sangwoo Han, Jongyeon Baek, Kijoon Kim, Dongjin Jung, Jisung Kim, Jaewoo Park, Seunghyun Kim, Hyoseok Kim, Ilyounz Yoon, Jaeho Kim, Kwangsoo Kim, Kwangmin Park, Bong Jin Kuh, Wanki Kim, Daewon Ha, Sujin Ahn, Jaihyuk Song, Sijung Yoo, Hyun Jae Lee, Duk-Hyun Choe, Seung-Geol Nam, Jinseong Heo

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET.

Taeyoung Kim, Suhwan Lim, Ilho Myeong, Sanghyun Park, Suseong Noh, Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Moonkang Choi, Kiheun Lee, Sangwoo Han, Jongyeon Baek, Kijoon Kim, Dongjin Jung, Jisung Kim, Jaewoo Park, Seunghyun Kim, Hyoseok Kim, Sijung Yoo, Hyun Jae Lee, Duk-Hyun Choe, Seung-Geol Nam, Ilyoung Yoon, Chaeho Kim, Kwanzsoo Kim, Kwanzmin Park, Bong Jin Kuh, Jinseong Heo, Wanki Kim, Daewon Ha, Jaihyuk Song

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing.

Taehwan Moon, Hyun Jae Lee, Seung-Geol Nam, Hagyoul Bae, Duk-Hyun Choe, Sanghyun Jo, Yunseong Lee, Yoonsang Park, J. Joshua Yang, Jinseong Heo

Neuromorph. Comput. Eng., June, 2023

2022

Broadband Characterization of Thin Dielectrics Using Heterolayer and Monolayer MIM Capacitors.

Yunsang Shin, Seung-Geol Nam, Jinseong Heo, Sangwook Nam

IEEE Trans. Instrum. Meas., 2022