Seonyong Cha

According to our database, Seonyong Cha authored at least 11 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

First Demonstration of Fully Integrated 16 nm Half-Pitch Selector Only Memory (SOM) for Emerging CXL Memory.

Myoungsub Kim, Yooncheol Bae, Jaehyuk Park, Jeongho Yeon, Hyungjoon Shim, Sehyun Jin, Hyunsoo Kim, Sangchul Oh, Gapsok Do, Dongyeol Yun, Hyung Dong Lee, David Ahn, Junghun Lee, Muhui Park, Junghyuk Yoon, Jeongho Yi, Taekseung Kim, Gain Park, Seoungju Chung, Junho Cheon, Sujin Chae, Namkyun Park, Kyunghoon Kim, Dongyean Oh, Jaeyun Yi, Seonyong Cha

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Improvement of MAC Accuracy using Oxygen Diffusion Barriers in Resistive Synaptic Cell Arrays.

Youngjae Kwon, Won-Tae Koo, Sangsu Park, Dong Ik Suh, Gunhee Lee, Hyung Dong Lee, Youngbae Ahn, Dohee Kim, Seungwook Ryu, Hoseok Em, Seokjoon Kang, Chang Won Jeong, Junho Cheon, Hyejung Choi, Soo Gil Kim, Seho Lee, Jaeyun Yi, Seonyong Cha

Proceedings of the IEEE International Memory Workshop, 2024

Modeling and Demonstration for Multi-level Weight Conductance in Computational FeFET Memory Cell.

Won-Tae Koo, Jae-Gil Lee, Gunhee Lee, Woocheol Lee, Jungwook Woo, Dong Ik Suh, Joongsik Kim, Hyung Dong Lee, Seho Lee, Jaeyun Yi, Seonyong Cha

Proceedings of the IEEE International Memory Workshop, 2024

Realistic Noise-aware Training as a Component of the Holistic ACiM Development Platform.

Jihun Kim, Sangsu Park, Hongju Suh, Youngjae Kwon, Seonghun Lee, Yubin Lee, Kayoung Kim, Eungu Han, Jongil Kim, Kyu Sung Kim, Hyejung Choi, Seungwook Ryu, Su Jin Chae, Seho Lee, Soo Gil Kim, Jaeyun Yi, Seonyong Cha

Proceedings of the IEEE International Memory Workshop, 2024

2023

QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering.

Sunghyun Yoon, Sung-In Hong, Daehyun Kim, Garam Choi, Young Mo Kim, Kyunghoon Min, Seiyon Kim, Myung-Hee Na, Seonyong Cha

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

The chalcogenide-based memory technology continues: beyond 20nm 4-deck 256Gb cross-point memory.

Jaeyun Yi, Myoungsub Kim, Jungwon Seo, Namkyun Park, Seungyun Lee, Jongil Kim, Gapsok Do, Hongjin Jang, Hyochol Koo, Sunglae Cho, Sujin Chae, Taehoon Kim, Myung-Hee Na, Seonyong Cha

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Demonstration of crystalline IGZO transistor with high thermal stability for memory applications.

Whayoung Kim, Jaehyeon Kim, Dongjin Ko, Jun-Hwe Cha, Gyeongcheol Park, Youngbae Ahn, Jong-Young Lee, Minchul Sung, Hyejung Choi, Seung Wook Ryu, Seiyon Kim, Myung-Hee Na, Seonyong Cha

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $\mathsf{i}$.

Bvunarvul Kim, Seungpil Lee, Beomseok Hah, Kanawoo Park, Yongsoon Park, Kangwook Jo, Yujong Noh, Hyeon-Cheon Seol, Hyunsoo Lee, Jae-Hyeon Shin, Seongjin Choi, Youngdon Jung, Sungho Ahn, Yonghun Park, Sujeong Oh, Myungsu Kim, Seonauk Kim, Hyunwook Park, Taeho Lee, Haeun Won, Minsung Kim, Cheulhee Koo, Yeonjoo Choi, Suyoung Choi, Sechun Park, Dongkyu Youn, Junyoun Lim, Wonsun Park, Hwang Hur, Kichang Kwean, Hongsok Choi, Woopyo Jeong, Sungyong Chung, Jungdal Choi, Seonyong Cha

Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2022

Holistic approaches to memory solutions for the Autonomous Driving Era.

Daeyong Shim, Chunseok Jeong, Euncheol Lee, Junmo Kang, Seokcheol Yoon, Yongkee Kwon, Il Park, Hyun Ahn, Seonyong Cha, Jinkook Kim

Proceedings of the IEEE International Symposium on Circuits and Systems, 2022

Recognition Accuracy Enhancement using Interface Control with Weight Variation-Lowering in Analog Computation-in-Memory.

Sangsu Park, Gyonhui Lee, Youngjae Kwon, Dong Ik Suh, Hanwool Lee, Sangeun Je, Dabin Kim, Dohan Lee, Seungwook Ryu, Seungbum Kim, Euiseok Kim, Sunghoon Lee, Kyoung Park, Seho Lee, Myung-Hee Na, Seonyong Cha

Proceedings of the IEEE International Memory Workshop, 2022

Memory Window Expansion for Ferroelectric FET based Multilevel NVM: Hybrid Solution with Combination of Polarization and Injected Charges.

Jae-Gil Lee, Joongsik Kim, Dong Ik Suh, Ildo Kim, Gwon Deok Han, Seung Wook Ryu, Seho Lee, Myung-Hee Na, Seonyong Cha, Hyeon Woo Park, Cheol Seong Hwang

Proceedings of the IEEE International Memory Workshop, 2022