Seonhaeng Lee

According to our database, Seonhaeng Lee authored at least 6 papers between 2012 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Cryogenic Body Bias Effect in DRAM Peripheral and Buried-Channel-Array Transistor for Quantum Computing Applications.

Hyunseo You, Kihoon Nam, Jehyun An, Chanyang Park, Donghyun Kim, Seonhaeng Lee, Namhyun Lee, Rock-Hyun Baek

IEEE Access, 2024

Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning.

Jun Hui Park, Jung Nam Kim, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Rock-Hyun Baek, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim

IEEE Access, 2024

2013

Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs.

Seonhaeng Lee, Cheolgyu Kim, Hyeokjin Kim, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang

Microelectron. Reliab., 2013

2012

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs.

Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang

Microelectron. Reliab., 2012

Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs.

Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, N.-H. Lee, Gang-Jun Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang

Microelectron. Reliab., 2012

Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress.

Dongwoo Kim, Seonhaeng Lee, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang

Microelectron. Reliab., 2012